Lasing and antibunching of optical phonons in semiconductor double quantum dots

R. Okuyama, Mikio Eto, T. Brandes

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We theoretically propose optical phonon lasing in a double quantum dot (DQD) fabricated on a semiconductor substrate. No additional cavity or resonator is required. An electron in the DQD is found to be coupled to only two longitudinal optical phonon modes that act as a natural cavity. When the energy level spacing in the DQD is tuned to the phonon energy, the electron transfer is accompanied by the emission of the phonon modes. The resulting non-equilibrium motion of electrons and phonons is analyzed by the rate equation approach based on the Born-Markov-Secular approximation. We show that lasing occurs for pumping the DQD via electron tunneling at a rate much larger than the phonon decay rate, whereas phonon antibunching is observed in the opposite regime of slow tunneling. Both effects disappear by an effective thermalization induced by the Franck-Condon effect in a DQD fabricated in a suspended carbon nanotube with strong electron-phonon coupling.

Original languageEnglish
Article number083032
JournalNew Journal of Physics
Volume15
DOIs
Publication statusPublished - 2013 Aug

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lasing
phonons
quantum dots
cavities
electrons
electron tunneling
decay rates
electron transfer
pumping
energy levels
resonators
carbon nanotubes
spacing
approximation
energy

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Lasing and antibunching of optical phonons in semiconductor double quantum dots. / Okuyama, R.; Eto, Mikio; Brandes, T.

In: New Journal of Physics, Vol. 15, 083032, 08.2013.

Research output: Contribution to journalArticle

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