Lateral grain size and electron mobility in ZnO epitaxial films grown on sapphire substrates

A. Ohtomo, H. Kimura, K. Saito, T. Makino, Y. Segawa, H. Koinuma, M. Kawasaki

Research output: Contribution to journalConference articlepeer-review

66 Citations (Scopus)

Abstract

We have fabricated ZnO thin films on sapphire substrates at temperatures ranging from 350 to 1000°C by laser molecular-beam epitaxy. With increasing growth temperature, lateral grain size evaluated by X-ray reciprocal space mapping increased resulting in improved electron mobility. When the film was grown at 1000°C, an electron mobility as large as 90 cm2/V s was achieved. By annealing in 1 atm of oxygen at 1000°C, thin films having much larger grain size (> 5μm2) and higher mobility (approx. 120 cm2/V s) comparable with those for bulk single crystals could be obtained.

Original languageEnglish
Pages (from-to)284-288
Number of pages5
JournalJournal of Crystal Growth
Volume214
DOIs
Publication statusPublished - 2000 Jun 2
Externally publishedYes
EventThe 9th International Conference on II-VI Compounds - Kyoto, Jpn
Duration: 1999 Nov 11999 Nov 5

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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