Lateral variation of interface disorder in wetting layer on formation of InAs/InP quantum dots visualized by near-field imaging spectroscopy

Hiroki Tojinbara; Motoki Takahashi; Nobuhiro Tsumori; Dai Mizuno; Ryosuke Kubota; Yoshiki Sakuma; Toshiharu Saiki

doi:10.1117/1.JNP.6.063521

Lateral variation of interface disorder in wetting layer on formation of InAs/InP quantum dots visualized by near-field imaging spectroscopy

Hiroki Tojinbara, Motoki Takahashi, Nobuhiro Tsumori, Dai Mizuno, Ryosuke Kubota, Yoshiki Sakuma, Toshiharu Saiki

Department of Electronics and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Near-field photoluminescence imaging spectroscopy of a wetting layer of InAs/InP quantum dots (QDs) at the critical thickness of 2.4 monolayers (ML) is used to visualize the spatial variation of the interface disorder. The wetting layer has a significantly lower density of carrier localization centers than a 2-ML thick InAs/InP quantum well, particularly in the vicinity of the QDs. This indicates that atomic-scale interface disorder is reduced during the initial stages of QD formation; in contrast, disorder remained far from the QDs.

Original language	English
Article number	063521
Journal	Journal of Nanophotonics
Volume	6
Issue number	1
DOIs	https://doi.org/10.1117/1.JNP.6.063521
Publication status	Published - 2012

Keywords

interface disorder
near-field scanning optical microscopy
photoluminescence
quantum dot
quantum well

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1117/1.JNP.6.063521

Cite this

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abstract = "Near-field photoluminescence imaging spectroscopy of a wetting layer of InAs/InP quantum dots (QDs) at the critical thickness of 2.4 monolayers (ML) is used to visualize the spatial variation of the interface disorder. The wetting layer has a significantly lower density of carrier localization centers than a 2-ML thick InAs/InP quantum well, particularly in the vicinity of the QDs. This indicates that atomic-scale interface disorder is reduced during the initial stages of QD formation; in contrast, disorder remained far from the QDs.",

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AU - Tojinbara, Hiroki

AU - Takahashi, Motoki

AU - Tsumori, Nobuhiro

AU - Mizuno, Dai

AU - Kubota, Ryosuke

AU - Sakuma, Yoshiki

AU - Saiki, Toshiharu

PY - 2012

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N2 - Near-field photoluminescence imaging spectroscopy of a wetting layer of InAs/InP quantum dots (QDs) at the critical thickness of 2.4 monolayers (ML) is used to visualize the spatial variation of the interface disorder. The wetting layer has a significantly lower density of carrier localization centers than a 2-ML thick InAs/InP quantum well, particularly in the vicinity of the QDs. This indicates that atomic-scale interface disorder is reduced during the initial stages of QD formation; in contrast, disorder remained far from the QDs.

AB - Near-field photoluminescence imaging spectroscopy of a wetting layer of InAs/InP quantum dots (QDs) at the critical thickness of 2.4 monolayers (ML) is used to visualize the spatial variation of the interface disorder. The wetting layer has a significantly lower density of carrier localization centers than a 2-ML thick InAs/InP quantum well, particularly in the vicinity of the QDs. This indicates that atomic-scale interface disorder is reduced during the initial stages of QD formation; in contrast, disorder remained far from the QDs.

KW - interface disorder

KW - near-field scanning optical microscopy

KW - photoluminescence

KW - quantum dot

KW - quantum well

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Lateral variation of interface disorder in wetting layer on formation of InAs/InP quantum dots visualized by near-field imaging spectroscopy

Abstract

Keywords

ASJC Scopus subject areas

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