Lateral variation of interface disorder in wetting layer on formation of InAs/InP quantum dots visualized by near-field imaging spectroscopy

Hiroki Tojinbara, Motoki Takahashi, Nobuhiro Tsumori, Dai Mizuno, Ryosuke Kubota, Yoshiki Sakuma, Toshiharu Saiki

Research output: Contribution to journalArticle


Near-field photoluminescence imaging spectroscopy of a wetting layer of InAs/InP quantum dots (QDs) at the critical thickness of 2.4 monolayers (ML) is used to visualize the spatial variation of the interface disorder. The wetting layer has a significantly lower density of carrier localization centers than a 2-ML thick InAs/InP quantum well, particularly in the vicinity of the QDs. This indicates that atomic-scale interface disorder is reduced during the initial stages of QD formation; in contrast, disorder remained far from the QDs.

Original languageEnglish
Article number063521
JournalJournal of Nanophotonics
Issue number1
Publication statusPublished - 2012 Dec 1



  • interface disorder
  • near-field scanning optical microscopy
  • photoluminescence
  • quantum dot
  • quantum well

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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