TY - JOUR
T1 - Layer by Layer Growth of Solid 4He on Graphite down to 0.1 K
AU - Koga, Aaron M.
AU - Shibayama, Yoshiyuki
AU - Shirahama, Keiya
N1 - Funding Information:
This work is supported by Grant-in-Aid for Scientific Research of Priority Area, “Physics of Superclean Materials,” by the Japanese Ministry of Education, Culture, Sports, Science and Technology.
PY - 2012/3
Y1 - 2012/3
N2 - The growth of solid 4He on graphite from the superfluid phase is known to occur at pressures well below the bulk solidification point. The number of adsorbed layers increases with pressure and the solid growth undergoes non-continuous layerby-layer growth at low temperature. We have studied this growth using the torsional oscillator method for isotherms down to 0.1 K. In contrast with simple layer-by-layer growth scenarios, our evidence suggests that the growth of adsorbed solid 4He is more complex and less solid is present on the graphite substrate at low temperature.
AB - The growth of solid 4He on graphite from the superfluid phase is known to occur at pressures well below the bulk solidification point. The number of adsorbed layers increases with pressure and the solid growth undergoes non-continuous layerby-layer growth at low temperature. We have studied this growth using the torsional oscillator method for isotherms down to 0.1 K. In contrast with simple layer-by-layer growth scenarios, our evidence suggests that the growth of adsorbed solid 4He is more complex and less solid is present on the graphite substrate at low temperature.
KW - Layering transitions
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U2 - 10.1007/s10909-011-0452-z
DO - 10.1007/s10909-011-0452-z
M3 - Article
AN - SCOPUS:84883268268
VL - 166
SP - 257
EP - 267
JO - Journal of Low Temperature Physics
JF - Journal of Low Temperature Physics
SN - 0022-2291
IS - 5-6
ER -