Layer by Layer Growth of Solid 4He on Graphite down to 0.1 K

Aaron M. Koga, Yoshiyuki Shibayama, Keiya Shirahama

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The growth of solid 4He on graphite from the superfluid phase is known to occur at pressures well below the bulk solidification point. The number of adsorbed layers increases with pressure and the solid growth undergoes non-continuous layerby-layer growth at low temperature. We have studied this growth using the torsional oscillator method for isotherms down to 0.1 K. In contrast with simple layer-by-layer growth scenarios, our evidence suggests that the growth of adsorbed solid 4He is more complex and less solid is present on the graphite substrate at low temperature.

Original languageEnglish
Pages (from-to)257-267
Number of pages11
JournalJournal of Low Temperature Physics
Volume166
Issue number5-6
DOIs
Publication statusPublished - 2012

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Graphite
graphite
solidification
Isotherms
Solidification
isotherms
oscillators
Temperature
Substrates

Keywords

  • Layering transitions

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)

Cite this

Layer by Layer Growth of Solid 4He on Graphite down to 0.1 K. / Koga, Aaron M.; Shibayama, Yoshiyuki; Shirahama, Keiya.

In: Journal of Low Temperature Physics, Vol. 166, No. 5-6, 2012, p. 257-267.

Research output: Contribution to journalArticle

Koga, Aaron M. ; Shibayama, Yoshiyuki ; Shirahama, Keiya. / Layer by Layer Growth of Solid 4He on Graphite down to 0.1 K. In: Journal of Low Temperature Physics. 2012 ; Vol. 166, No. 5-6. pp. 257-267.
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