Layer by Layer Growth of Solid 4He on Graphite down to 0.1 K

Aaron M. Koga, Yoshiyuki Shibayama, Keiya Shirahama

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

The growth of solid 4He on graphite from the superfluid phase is known to occur at pressures well below the bulk solidification point. The number of adsorbed layers increases with pressure and the solid growth undergoes non-continuous layerby-layer growth at low temperature. We have studied this growth using the torsional oscillator method for isotherms down to 0.1 K. In contrast with simple layer-by-layer growth scenarios, our evidence suggests that the growth of adsorbed solid 4He is more complex and less solid is present on the graphite substrate at low temperature.

Original languageEnglish
Pages (from-to)257-267
Number of pages11
JournalJournal of Low Temperature Physics
Volume166
Issue number5-6
DOIs
Publication statusPublished - 2012 Jan 1

Keywords

  • Layering transitions

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Layer by Layer Growth of Solid <sup>4</sup>He on Graphite down to 0.1 K'. Together they form a unique fingerprint.

Cite this