Abstract
The growth of solid 4He on graphite from the superfluid phase is known to occur at pressures well below the bulk solidification point. The number of adsorbed layers increases with pressure and the solid growth undergoes non-continuous layerby-layer growth at low temperature. We have studied this growth using the torsional oscillator method for isotherms down to 0.1 K. In contrast with simple layer-by-layer growth scenarios, our evidence suggests that the growth of adsorbed solid 4He is more complex and less solid is present on the graphite substrate at low temperature.
| Original language | English |
|---|---|
| Pages (from-to) | 257-267 |
| Number of pages | 11 |
| Journal | Journal of Low Temperature Physics |
| Volume | 166 |
| Issue number | 5-6 |
| DOIs | |
| Publication status | Published - 2012 |
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Keywords
- Layering transitions
ASJC Scopus subject areas
- Condensed Matter Physics
- Atomic and Molecular Physics, and Optics
- Materials Science(all)
Cite this
Layer by Layer Growth of Solid 4He on Graphite down to 0.1 K. / Koga, Aaron M.; Shibayama, Yoshiyuki; Shirahama, Keiya.
In: Journal of Low Temperature Physics, Vol. 166, No. 5-6, 2012, p. 257-267.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Layer by Layer Growth of Solid 4He on Graphite down to 0.1 K
AU - Koga, Aaron M.
AU - Shibayama, Yoshiyuki
AU - Shirahama, Keiya
PY - 2012
Y1 - 2012
N2 - The growth of solid 4He on graphite from the superfluid phase is known to occur at pressures well below the bulk solidification point. The number of adsorbed layers increases with pressure and the solid growth undergoes non-continuous layerby-layer growth at low temperature. We have studied this growth using the torsional oscillator method for isotherms down to 0.1 K. In contrast with simple layer-by-layer growth scenarios, our evidence suggests that the growth of adsorbed solid 4He is more complex and less solid is present on the graphite substrate at low temperature.
AB - The growth of solid 4He on graphite from the superfluid phase is known to occur at pressures well below the bulk solidification point. The number of adsorbed layers increases with pressure and the solid growth undergoes non-continuous layerby-layer growth at low temperature. We have studied this growth using the torsional oscillator method for isotherms down to 0.1 K. In contrast with simple layer-by-layer growth scenarios, our evidence suggests that the growth of adsorbed solid 4He is more complex and less solid is present on the graphite substrate at low temperature.
KW - Layering transitions
UR - http://www.scopus.com/inward/record.url?scp=84883268268&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84883268268&partnerID=8YFLogxK
U2 - 10.1007/s10909-011-0452-z
DO - 10.1007/s10909-011-0452-z
M3 - Article
AN - SCOPUS:84883268268
VL - 166
SP - 257
EP - 267
JO - Journal of Low Temperature Physics
JF - Journal of Low Temperature Physics
SN - 0022-2291
IS - 5-6
ER -