Abstract
This paper proposes a level-shifter free (LSF) approach for multi-VDD design to employ a combination of body bias control and a superior threshold-voltage (Vt) modulation capability of SOTB (Silicon on Thin BOX) devices. We applied this approach to a microprocessor test chip with low-voltage (VDDL) and high-voltage (VDDH) domains, and fabricated it in a 65nm SOTB technology. Measurement results demonstrated that the chip correctly operates at VDDL=0.6V and VDDH=1.2V under the reverse-body-bias (RBB) of 2V for pMOS transistors in the VDDH domain while suppressing the static dc current.
| Original language | English |
|---|---|
| Title of host publication | 2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 1-3 |
| Number of pages | 3 |
| Volume | 2018-March |
| ISBN (Electronic) | 9781538637654 |
| DOIs | |
| Publication status | Published - 2018 Mar 7 |
| Event | 2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017 - Burlingame, United States Duration: 2017 Oct 16 → 2017 Oct 18 |
Other
| Other | 2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017 |
|---|---|
| Country | United States |
| City | Burlingame |
| Period | 17/10/16 → 17/10/18 |
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Keywords
- body bias control
- level shifter
- multi-VDD
- SOTB
ASJC Scopus subject areas
- Hardware and Architecture
- Electrical and Electronic Engineering
Cite this
Level-shifter free approach for multi-Vdd SOTB employing adaptive Vt modulation for pMOSFET. / Usami, Kimiyoshi; Kogure, Shunsuke; Yoshida, Yusuke; Magasaki, Ryo; Amano, Hideharu.
2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017. Vol. 2018-March Institute of Electrical and Electronics Engineers Inc., 2018. p. 1-3.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Level-shifter free approach for multi-Vdd SOTB employing adaptive Vt modulation for pMOSFET
AU - Usami, Kimiyoshi
AU - Kogure, Shunsuke
AU - Yoshida, Yusuke
AU - Magasaki, Ryo
AU - Amano, Hideharu
PY - 2018/3/7
Y1 - 2018/3/7
N2 - This paper proposes a level-shifter free (LSF) approach for multi-VDD design to employ a combination of body bias control and a superior threshold-voltage (Vt) modulation capability of SOTB (Silicon on Thin BOX) devices. We applied this approach to a microprocessor test chip with low-voltage (VDDL) and high-voltage (VDDH) domains, and fabricated it in a 65nm SOTB technology. Measurement results demonstrated that the chip correctly operates at VDDL=0.6V and VDDH=1.2V under the reverse-body-bias (RBB) of 2V for pMOS transistors in the VDDH domain while suppressing the static dc current.
AB - This paper proposes a level-shifter free (LSF) approach for multi-VDD design to employ a combination of body bias control and a superior threshold-voltage (Vt) modulation capability of SOTB (Silicon on Thin BOX) devices. We applied this approach to a microprocessor test chip with low-voltage (VDDL) and high-voltage (VDDH) domains, and fabricated it in a 65nm SOTB technology. Measurement results demonstrated that the chip correctly operates at VDDL=0.6V and VDDH=1.2V under the reverse-body-bias (RBB) of 2V for pMOS transistors in the VDDH domain while suppressing the static dc current.
KW - body bias control
KW - level shifter
KW - multi-VDD
KW - SOTB
UR - http://www.scopus.com/inward/record.url?scp=85047645795&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85047645795&partnerID=8YFLogxK
U2 - 10.1109/S3S.2017.8309226
DO - 10.1109/S3S.2017.8309226
M3 - Conference contribution
VL - 2018-March
SP - 1
EP - 3
BT - 2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017
PB - Institute of Electrical and Electronics Engineers Inc.
ER -