Linewidth of low-field electrically detected magnetic resonance of phosphorus in isotopically controlled silicon

Hiroki Morishita, Eisuke Abe, Waseem Akhtar, Leonid S. Vlasenko, Akira Fujimoto, Kentarou Sawano, Yasuhiro Shiraki, Lukas Dreher, Helge Riemann, Nikolai V. Abrosimov, Peter Becker, Hans J. Pohl, Mike L.W. Thewalt, Martin S. Brandt, Kohei M. Itoh

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

The linewidth of the low-field electrically detected magnetic resonance (LFEDMR) of phosphorus electrons in silicon is investigated using samples with various 29Si nuclear spin fractions and is compared to that of X-band electron paramagnetic resonance (EPR). The linewidths of LFEDMR and EPR are the same even though LFEDMR signals are obtained based on spin-dependent recombination, suggesting that the interaction between electron spins of phosphorus and recombination centers is strong enough for the LFEDMR detection but weak enough not to affect the linewidths. This favorable balance makes LFEDMR an attractive method to elucidate the low-field behavior of paramagnetic defects in semiconductors.

Original languageEnglish
Article number21302
JournalApplied Physics Express
Volume4
Issue number2
DOIs
Publication statusPublished - 2011 Feb

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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