Linewidth of low-field electrically detected magnetic resonance of phosphorus in isotopically controlled silicon

Hiroki Morishita; Eisuke Abe; Waseem Akhtar; Leonid S. Vlasenko; Akira Fujimoto; Kentarou Sawano; Yasuhiro Shiraki; Lukas Dreher; Helge Riemann; Nikolai V. Abrosimov; Peter Becker; Hans J. Pohl; Mike L.W. Thewalt; Martin S. Brandt; Kohei M. Itoh

doi:10.1143/APEX.4.021302

Linewidth of low-field electrically detected magnetic resonance of phosphorus in isotopically controlled silicon

Hiroki Morishita, Eisuke Abe, Waseem Akhtar, Leonid S. Vlasenko, Akira Fujimoto, Kentarou Sawano, Yasuhiro Shiraki, Lukas Dreher, Helge Riemann, Nikolai V. Abrosimov, Peter Becker, Hans J. Pohl, Mike L.W. Thewalt, Martin S. Brandt, Kohei M. Itoh

Department of Applied Physics and Physico-Informatics

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

The linewidth of the low-field electrically detected magnetic resonance (LFEDMR) of phosphorus electrons in silicon is investigated using samples with various ²⁹Si nuclear spin fractions and is compared to that of X-band electron paramagnetic resonance (EPR). The linewidths of LFEDMR and EPR are the same even though LFEDMR signals are obtained based on spin-dependent recombination, suggesting that the interaction between electron spins of phosphorus and recombination centers is strong enough for the LFEDMR detection but weak enough not to affect the linewidths. This favorable balance makes LFEDMR an attractive method to elucidate the low-field behavior of paramagnetic defects in semiconductors.

Original language	English
Article number	21302
Journal	Applied Physics Express
Volume	4
Issue number	2
DOIs	https://doi.org/10.1143/APEX.4.021302
Publication status	Published - 2011 Feb

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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Morishita, H., Abe, E., Akhtar, W., Vlasenko, L. S., Fujimoto, A., Sawano, K., Shiraki, Y., Dreher, L., Riemann, H., Abrosimov, N. V., Becker, P., Pohl, H. J., Thewalt, M. L. W., Brandt, M. S., & Itoh, K. M. (2011). Linewidth of low-field electrically detected magnetic resonance of phosphorus in isotopically controlled silicon. Applied Physics Express, 4(2), [21302]. https://doi.org/10.1143/APEX.4.021302

Morishita, H, Abe, E, Akhtar, W, Vlasenko, LS, Fujimoto, A, Sawano, K, Shiraki, Y, Dreher, L, Riemann, H, Abrosimov, NV, Becker, P, Pohl, HJ, Thewalt, MLW, Brandt, MS & Itoh, KM 2011, 'Linewidth of low-field electrically detected magnetic resonance of phosphorus in isotopically controlled silicon', Applied Physics Express, vol. 4, no. 2, 21302. https://doi.org/10.1143/APEX.4.021302

@article{aa8231483049413ab71b698614db6fb8,

title = "Linewidth of low-field electrically detected magnetic resonance of phosphorus in isotopically controlled silicon",

abstract = "The linewidth of the low-field electrically detected magnetic resonance (LFEDMR) of phosphorus electrons in silicon is investigated using samples with various 29Si nuclear spin fractions and is compared to that of X-band electron paramagnetic resonance (EPR). The linewidths of LFEDMR and EPR are the same even though LFEDMR signals are obtained based on spin-dependent recombination, suggesting that the interaction between electron spins of phosphorus and recombination centers is strong enough for the LFEDMR detection but weak enough not to affect the linewidths. This favorable balance makes LFEDMR an attractive method to elucidate the low-field behavior of paramagnetic defects in semiconductors.",

author = "Hiroki Morishita and Eisuke Abe and Waseem Akhtar and Vlasenko, {Leonid S.} and Akira Fujimoto and Kentarou Sawano and Yasuhiro Shiraki and Lukas Dreher and Helge Riemann and Abrosimov, {Nikolai V.} and Peter Becker and Pohl, {Hans J.} and Thewalt, {Mike L.W.} and Brandt, {Martin S.} and Itoh, {Kohei M.}",

year = "2011",

month = feb,

doi = "10.1143/APEX.4.021302",

language = "English",

volume = "4",

journal = "Applied Physics Express",

issn = "1882-0778",

publisher = "Japan Society of Applied Physics",

number = "2",

}

TY - JOUR

T1 - Linewidth of low-field electrically detected magnetic resonance of phosphorus in isotopically controlled silicon

AU - Morishita, Hiroki

AU - Abe, Eisuke

AU - Akhtar, Waseem

AU - Vlasenko, Leonid S.

AU - Fujimoto, Akira

AU - Sawano, Kentarou

AU - Shiraki, Yasuhiro

AU - Dreher, Lukas

AU - Riemann, Helge

AU - Abrosimov, Nikolai V.

AU - Becker, Peter

AU - Pohl, Hans J.

AU - Thewalt, Mike L.W.

AU - Brandt, Martin S.

AU - Itoh, Kohei M.

PY - 2011/2

Y1 - 2011/2

N2 - The linewidth of the low-field electrically detected magnetic resonance (LFEDMR) of phosphorus electrons in silicon is investigated using samples with various 29Si nuclear spin fractions and is compared to that of X-band electron paramagnetic resonance (EPR). The linewidths of LFEDMR and EPR are the same even though LFEDMR signals are obtained based on spin-dependent recombination, suggesting that the interaction between electron spins of phosphorus and recombination centers is strong enough for the LFEDMR detection but weak enough not to affect the linewidths. This favorable balance makes LFEDMR an attractive method to elucidate the low-field behavior of paramagnetic defects in semiconductors.

AB - The linewidth of the low-field electrically detected magnetic resonance (LFEDMR) of phosphorus electrons in silicon is investigated using samples with various 29Si nuclear spin fractions and is compared to that of X-band electron paramagnetic resonance (EPR). The linewidths of LFEDMR and EPR are the same even though LFEDMR signals are obtained based on spin-dependent recombination, suggesting that the interaction between electron spins of phosphorus and recombination centers is strong enough for the LFEDMR detection but weak enough not to affect the linewidths. This favorable balance makes LFEDMR an attractive method to elucidate the low-field behavior of paramagnetic defects in semiconductors.

UR - http://www.scopus.com/inward/record.url?scp=79951655991&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79951655991&partnerID=8YFLogxK

U2 - 10.1143/APEX.4.021302

DO - 10.1143/APEX.4.021302

M3 - Article

AN - SCOPUS:79951655991

SN - 1882-0778

VL - 4

JO - Applied Physics Express

JF - Applied Physics Express

IS - 2

M1 - 21302

ER -

Linewidth of low-field electrically detected magnetic resonance of phosphorus in isotopically controlled silicon

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