The thin film of tin oxide was formed in the solution containing 0.005-0.3 mol/1 SnF2. The procedure of film formation was very simple; the solution, in which a substrate is immersed, is maintained above 40°C for tens of hours. In this method, the hydrolysis product of SnF2 deposited as the film on a substrate. As-deposition film included 6-16 mol% fluorine. The chemical component was deduced as SnO2-05xFx, where 0.17 < × < 0.5. The film was modified to pure SnO2 by heating above 300°C. The electrical conductivity was improved to 1.4 × 10-2 Ω cm by heating at 500°C. The model of liquid phase deposition was proposed to extend another oxide film.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Materials Chemistry