Local control of emission energy of semiconductor quantum dots using volume expansion of a phase-change material

Motoki Takahashi; Nurrul Syafawati Humam; Nobuhiro Tsumori; Toshiharu Saiki; Philippe Regreny; Michel Gendry

doi:10.1063/1.4795291

Local control of emission energy of semiconductor quantum dots using volume expansion of a phase-change material

Motoki Takahashi, Nurrul Syafawati Humam, Nobuhiro Tsumori, Toshiharu Saiki, Philippe Regreny, Michel Gendry

Department of Electronics and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

A method is proposed to precisely control the emission energy of semiconductor quantum dots (QDs) by the application of local strain due to volume expansion of a phase-change material (GeSbTe) upon amorphization. The feasibility of the method is experimentally demonstrated using photoluminescence (PL) spectroscopy of single InAs/InP QDs on which a GeSbTe thin film is deposited. A significant red-shift of the PL peak energy upon amorphization and subsequent recovery by recrystallization with laser annealing were observed.

Original language	English
Article number	093120
Journal	Applied Physics Letters
Volume	102
Issue number	9
DOIs	https://doi.org/10.1063/1.4795291
Publication status	Published - 2013 Mar 4

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4795291

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title = "Local control of emission energy of semiconductor quantum dots using volume expansion of a phase-change material",

abstract = "A method is proposed to precisely control the emission energy of semiconductor quantum dots (QDs) by the application of local strain due to volume expansion of a phase-change material (GeSbTe) upon amorphization. The feasibility of the method is experimentally demonstrated using photoluminescence (PL) spectroscopy of single InAs/InP QDs on which a GeSbTe thin film is deposited. A significant red-shift of the PL peak energy upon amorphization and subsequent recovery by recrystallization with laser annealing were observed.",

author = "Motoki Takahashi and {Syafawati Humam}, Nurrul and Nobuhiro Tsumori and Toshiharu Saiki and Philippe Regreny and Michel Gendry",

note = "Funding Information: This research was supported by a Grant-in-Aid for Scientific Research (B) from the Ministry of Education, Culture, Sport, Science, and Technology of Japan. We would like to thank Keiichiro Yusu for the formation of the GeSbTe films on the QDs.",

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T1 - Local control of emission energy of semiconductor quantum dots using volume expansion of a phase-change material

AU - Takahashi, Motoki

AU - Syafawati Humam, Nurrul

AU - Tsumori, Nobuhiro

AU - Saiki, Toshiharu

AU - Regreny, Philippe

AU - Gendry, Michel

N1 - Funding Information: This research was supported by a Grant-in-Aid for Scientific Research (B) from the Ministry of Education, Culture, Sport, Science, and Technology of Japan. We would like to thank Keiichiro Yusu for the formation of the GeSbTe films on the QDs.

PY - 2013/3/4

Y1 - 2013/3/4

N2 - A method is proposed to precisely control the emission energy of semiconductor quantum dots (QDs) by the application of local strain due to volume expansion of a phase-change material (GeSbTe) upon amorphization. The feasibility of the method is experimentally demonstrated using photoluminescence (PL) spectroscopy of single InAs/InP QDs on which a GeSbTe thin film is deposited. A significant red-shift of the PL peak energy upon amorphization and subsequent recovery by recrystallization with laser annealing were observed.

AB - A method is proposed to precisely control the emission energy of semiconductor quantum dots (QDs) by the application of local strain due to volume expansion of a phase-change material (GeSbTe) upon amorphization. The feasibility of the method is experimentally demonstrated using photoluminescence (PL) spectroscopy of single InAs/InP QDs on which a GeSbTe thin film is deposited. A significant red-shift of the PL peak energy upon amorphization and subsequent recovery by recrystallization with laser annealing were observed.

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Local control of emission energy of semiconductor quantum dots using volume expansion of a phase-change material

Abstract

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