Local control of emission energy of semiconductor quantum dots using volume expansion of a phase-change material

Motoki Takahashi, Nurrul Syafawati Humam, Nobuhiro Tsumori, Toshiharu Saiki, Philippe Regreny, Michel Gendry

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    8 Citations (Scopus)

    Abstract

    A method is proposed to precisely control the emission energy of semiconductor quantum dots (QDs) by the application of local strain due to volume expansion of a phase-change material (GeSbTe) upon amorphization. The feasibility of the method is experimentally demonstrated using photoluminescence (PL) spectroscopy of single InAs/InP QDs on which a GeSbTe thin film is deposited. A significant red-shift of the PL peak energy upon amorphization and subsequent recovery by recrystallization with laser annealing were observed.

    Original languageEnglish
    Article number093120
    JournalApplied Physics Letters
    Volume102
    Issue number9
    DOIs
    Publication statusPublished - 2013 Mar 4

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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