Local control of emission energy of semiconductor quantum dots using volume expansion of a phase-change material

Motoki Takahashi, Nurrul Syafawati Humam, Nobuhiro Tsumori, Toshiharu Saiki, Philippe Regreny, Michel Gendry

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

A method is proposed to precisely control the emission energy of semiconductor quantum dots (QDs) by the application of local strain due to volume expansion of a phase-change material (GeSbTe) upon amorphization. The feasibility of the method is experimentally demonstrated using photoluminescence (PL) spectroscopy of single InAs/InP QDs on which a GeSbTe thin film is deposited. A significant red-shift of the PL peak energy upon amorphization and subsequent recovery by recrystallization with laser annealing were observed.

Original languageEnglish
Article number093120
JournalApplied Physics Letters
Volume102
Issue number9
DOIs
Publication statusPublished - 2013 Mar 4

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phase change materials
quantum dots
photoluminescence
expansion
laser annealing
red shift
recovery
energy
thin films
spectroscopy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Local control of emission energy of semiconductor quantum dots using volume expansion of a phase-change material. / Takahashi, Motoki; Syafawati Humam, Nurrul; Tsumori, Nobuhiro; Saiki, Toshiharu; Regreny, Philippe; Gendry, Michel.

In: Applied Physics Letters, Vol. 102, No. 9, 093120, 04.03.2013.

Research output: Contribution to journalArticle

Takahashi, Motoki ; Syafawati Humam, Nurrul ; Tsumori, Nobuhiro ; Saiki, Toshiharu ; Regreny, Philippe ; Gendry, Michel. / Local control of emission energy of semiconductor quantum dots using volume expansion of a phase-change material. In: Applied Physics Letters. 2013 ; Vol. 102, No. 9.
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