Local density of states mapping of a field-induced quantum dot by near-field photoluminescence microscopy

K. Matsuda, Toshiharu Saiki, S. Nomura, Y. Aoyagi

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Abstract

We have described near-field photoluminescence microscopy of a field-induced quantum-dot structure based on a Be- δ -doped GaAs-Al 1-xGaxAs single heterojunction with a surface square mesh gate. The local density of states in the field-induced quantum dot was mapped by measuring the spatial distribution of the near-field photoluminescence intensity, because the photoluminescence spectrum owing to the recombination of holes bound to Be accepters with electrons in an electron gas contains information on the electronic density of states. Experimentally, we observed that the electrons confined in lower energy states spatially localize in a field-induced quantum dot.

Original languageEnglish
Article number043112
JournalApplied Physics Letters
Volume87
Issue number4
DOIs
Publication statusPublished - 2005 Jul 25

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near fields
quantum dots
microscopy
photoluminescence
electron gas
heterojunctions
mesh
spatial distribution
electrons
electronics
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Local density of states mapping of a field-induced quantum dot by near-field photoluminescence microscopy. / Matsuda, K.; Saiki, Toshiharu; Nomura, S.; Aoyagi, Y.

In: Applied Physics Letters, Vol. 87, No. 4, 043112, 25.07.2005.

Research output: Contribution to journalArticle

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