Local distribution of residual stress of Cu in LSI interconnect

Hisashi Sato, Nobuyuki Shishido, Shoji Kamiya, Kozo Koiwa, Masaki Omiya, Masahiro Nishida, Takashi Suzuki, Tomoji Nakamura, Takeshi Nokuo

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Local distributions of crystal orientation and residual stress of Cu lines (600 nm and 400 nm) in large-scale integrated circuit (LSI) interconnects are visualized by electron backscatter diffraction (EBSD). The crystal orientation distribution is random and texture is not observed. Bamboo grain boundary structures form with decreasing Cu line width. The Wilkinson EBSD method indicates that the residual elastic stress of a Cu line in an LSI interconnect is locally high at twin boundaries, grain boundaries, and the Cu/dielectric interface. The local distributions of residual elastic stress at these boundaries and the interface should induce preferential crack nucleation.

Original languageEnglish
Pages (from-to)362-365
Number of pages4
JournalMaterials Letters
Volume136
DOIs
Publication statusPublished - 2014

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Keywords

  • Copper
  • Crystal orientation
  • Electron backscatter diffraction
  • LSI interconnect
  • Residual stress

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Sato, H., Shishido, N., Kamiya, S., Koiwa, K., Omiya, M., Nishida, M., Suzuki, T., Nakamura, T., & Nokuo, T. (2014). Local distribution of residual stress of Cu in LSI interconnect. Materials Letters, 136, 362-365. https://doi.org/10.1016/j.matlet.2014.08.088