TY - GEN
T1 - Local structure of AgOx thin layers generating optical near-field
AU - Kolobov, A. V.
AU - Buechel, D.
AU - Fons, P.
AU - Tominaga, J.
PY - 2002/1/1
Y1 - 2002/1/1
N2 - Discovery of near-field generation by plasmons excited in thin AgOx layers made them important components in advanced optical technologies such as Super-RENS (H. Fuji et al, Jpn. J. Appl. Phys., vol. 39, p. 980, 2000) and the purely optical photonic transistor (J. Tominaga et al, Appl. Phys. Lett., vol. 78, p. 2417, 2001). In order to unravel the nanometer-scale mechanism of the silver nanoparticle formation upon photo-induced decomposition of the AgOx layer and its relationship with the plasmon generation efficiency, knowledge of the local structure of as-deposited AgOx layers and its modification upon thermal annealing and optical initialization is of utmost importance. A unique technique which allows determination of the local structure with atomic selectivity in both crystalline and amorphous states is X-ray absorption fine structure (XAFS) spectroscopy. In this paper, we present the results of the first such study applied to AgOx thin layers.
AB - Discovery of near-field generation by plasmons excited in thin AgOx layers made them important components in advanced optical technologies such as Super-RENS (H. Fuji et al, Jpn. J. Appl. Phys., vol. 39, p. 980, 2000) and the purely optical photonic transistor (J. Tominaga et al, Appl. Phys. Lett., vol. 78, p. 2417, 2001). In order to unravel the nanometer-scale mechanism of the silver nanoparticle formation upon photo-induced decomposition of the AgOx layer and its relationship with the plasmon generation efficiency, knowledge of the local structure of as-deposited AgOx layers and its modification upon thermal annealing and optical initialization is of utmost importance. A unique technique which allows determination of the local structure with atomic selectivity in both crystalline and amorphous states is X-ray absorption fine structure (XAFS) spectroscopy. In this paper, we present the results of the first such study applied to AgOx thin layers.
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U2 - 10.1109/OMODS.2002.1028617
DO - 10.1109/OMODS.2002.1028617
M3 - Conference contribution
AN - SCOPUS:84962881233
T3 - 2002 International Symposium on Optical Memory and Optical Data Storage Topical Meeting, ISOM/ODS 2002 - Joint International Symposium on Optical Memory and Optical Data Storage 2002, Technical Digest
SP - 207
EP - 209
BT - 2002 International Symposium on Optical Memory and Optical Data Storage Topical Meeting, ISOM/ODS 2002 - Joint International Symposium on Optical Memory and Optical Data Storage 2002, Technical Digest
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - International Symposium on Optical Memory and Optical Data Storage Topical Meeting, ISOM/ODS 2002 - Joint International Symposium on Optical Memory and Optical Data Storage 2002
Y2 - 7 July 2002 through 11 July 2002
ER -