Local structure of epitaxial GeTe and Ge2Sb2Te5 films grown on InAs and Si substrates with (100) and (111) orientations: An x-ray absorption near-edge structure study

A. V. Kolobov, P. Fons, M. Krbal, J. Tominaga, A. Giussani, K. Perumal, H. Riechert, R. Calarco, T. Uruga

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

GeTe is an end-point of the GeTe-Sb2Te3 quasibinary alloys often referred to as phase-change memory materials. The polycrystalline nature of the crystalline films used in devices and the concomitant presence of grain boundaries complicate detailed structural studies of the local structure. Recent progress in the epitaxial growth of phase-change materials offers unique possibilities for precise structural investigations. In this work, we report on results of x-ray absorption near-edge structure (XANES) studies of GeTe and Ge2Sb2Te5 epitaxial films grown on Si and InAs substrates with (100) and (111) orientations. The results show a strong dependence of the local structure on the substrate material and especially orientation and are discussed in conjunction with polycrystalline samples and ab-initio XANES simulations.

Original languageEnglish
Article number125308
JournalJournal of Applied Physics
Volume117
Issue number12
DOIs
Publication statusPublished - 2015 Mar 28
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Local structure of epitaxial GeTe and Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> films grown on InAs and Si substrates with (100) and (111) orientations: An x-ray absorption near-edge structure study'. Together they form a unique fingerprint.

  • Cite this