Local structure of Ge nanoislands on Si(111) surfaces with a SiO2 coverage

Alexander V. Kolobov, Alexander A. Shklyaev, Hiroyuki Oyanagi, Paul Fons, Satoshi Yamasaki, Masakazu Ichikawa

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Abstract

We have investigated the local structure and photoluminescence properties of ultrasmall Ge islands grown on Si(111) covered with SiO2. Scanning electron microscopy and transmission electron microscopy measurements show that the islands have a hemispherical shape, and depending on the growth temperature, can be either epitaxial or nonepitaxial. X-ray absorption near-edge structure measurements demonstrate that the nonepitaxial islands have the local structure of bulk diamond Ge and are very stable towards oxidation. The epitaxial islands are found to be partly oxidized, but no alloying with the Si substrate is observed. The nonepitaxial islands exhibit a photoluminescence peaked at 2.3 eV, which is typical of Ge nanocrystals embedded in SiO2. Possible mechanisms for the stability of the nonepitaxial Ge islands towards oxidation are discussed.

Original languageEnglish
Pages (from-to)2563-2565
Number of pages3
JournalApplied Physics Letters
Volume78
Issue number17
DOIs
Publication statusPublished - 2001 Apr 23
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Kolobov, A. V., Shklyaev, A. A., Oyanagi, H., Fons, P., Yamasaki, S., & Ichikawa, M. (2001). Local structure of Ge nanoislands on Si(111) surfaces with a SiO2 coverage. Applied Physics Letters, 78(17), 2563-2565. https://doi.org/10.1063/1.1367287