Localization length and impurity dielectric susceptibility in the critical regime of the metal-insulator transition in homogeneously doped p-type Ge

Michio Watanabe, Kohei M Itoh, Youiti Ootuka, Eugene E. Haller

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10 Citations (Scopus)

Abstract

We have determined the localization length ξ and the impurity dielectric susceptibility χimp as a function of Ga acceptor concentrations (N) in nominally uncompensated 70Ge:Ga just below the critical concentration (Nc) for the metal-insulator transition. Both ξ and χimp diverge at Nc according to the functions ξ∝(1 -N/Nc) and χimp∝(Nc/N-1), respectively, with ν=1.2±0.3 and ζ=2.3±0.6 for 0.99Nc<N<Nc. Outside of this region (N<0.99Nc), the values of the exponents drop to ν=0.33±0.03 and ζ=0.62±0.05. The effect of the small amount of compensating dopants that are present in our nominally uncompensated samples, may be responsible for the change of the critical exponents at N≈=0.99Nc.

Original languageEnglish
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume62
Issue number4
Publication statusPublished - 2000

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Metal insulator transition
Doping (additives)
insulators
exponents
Impurities
magnetic permeability
impurities
metals

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

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abstract = "We have determined the localization length ξ and the impurity dielectric susceptibility χimp as a function of Ga acceptor concentrations (N) in nominally uncompensated 70Ge:Ga just below the critical concentration (Nc) for the metal-insulator transition. Both ξ and χimp diverge at Nc according to the functions ξ∝(1 -N/Nc)-ν and χimp∝(Nc/N-1)-ζ, respectively, with ν=1.2±0.3 and ζ=2.3±0.6 for 0.99Nc<N<Nc. Outside of this region (N<0.99Nc), the values of the exponents drop to ν=0.33±0.03 and ζ=0.62±0.05. The effect of the small amount of compensating dopants that are present in our nominally uncompensated samples, may be responsible for the change of the critical exponents at N≈=0.99Nc.",
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T1 - Localization length and impurity dielectric susceptibility in the critical regime of the metal-insulator transition in homogeneously doped p-type Ge

AU - Watanabe, Michio

AU - Itoh, Kohei M

AU - Ootuka, Youiti

AU - Haller, Eugene E.

PY - 2000

Y1 - 2000

N2 - We have determined the localization length ξ and the impurity dielectric susceptibility χimp as a function of Ga acceptor concentrations (N) in nominally uncompensated 70Ge:Ga just below the critical concentration (Nc) for the metal-insulator transition. Both ξ and χimp diverge at Nc according to the functions ξ∝(1 -N/Nc)-ν and χimp∝(Nc/N-1)-ζ, respectively, with ν=1.2±0.3 and ζ=2.3±0.6 for 0.99Nc<N<Nc. Outside of this region (N<0.99Nc), the values of the exponents drop to ν=0.33±0.03 and ζ=0.62±0.05. The effect of the small amount of compensating dopants that are present in our nominally uncompensated samples, may be responsible for the change of the critical exponents at N≈=0.99Nc.

AB - We have determined the localization length ξ and the impurity dielectric susceptibility χimp as a function of Ga acceptor concentrations (N) in nominally uncompensated 70Ge:Ga just below the critical concentration (Nc) for the metal-insulator transition. Both ξ and χimp diverge at Nc according to the functions ξ∝(1 -N/Nc)-ν and χimp∝(Nc/N-1)-ζ, respectively, with ν=1.2±0.3 and ζ=2.3±0.6 for 0.99Nc<N<Nc. Outside of this region (N<0.99Nc), the values of the exponents drop to ν=0.33±0.03 and ζ=0.62±0.05. The effect of the small amount of compensating dopants that are present in our nominally uncompensated samples, may be responsible for the change of the critical exponents at N≈=0.99Nc.

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