Abstract
We have determined the localization length ξ and the impurity dielectric susceptibility χimp as a function of Ga acceptor concentrations (N) in nominally uncompensated 70Ge:Ga just below the critical concentration (Nc) for the metal-insulator transition. Both ξ and χimp diverge at Nc according to the functions ξ∝(1 -N/Nc)-ν and χimp∝(Nc/N-1)-ζ, respectively, with ν=1.2±0.3 and ζ=2.3±0.6 for 0.99Nc<N<Nc. Outside of this region (N<0.99Nc), the values of the exponents drop to ν=0.33±0.03 and ζ=0.62±0.05. The effect of the small amount of compensating dopants that are present in our nominally uncompensated samples, may be responsible for the change of the critical exponents at N≈=0.99Nc.
| Original language | English |
|---|---|
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 62 |
| Issue number | 4 |
| Publication status | Published - 2000 |
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ASJC Scopus subject areas
- Condensed Matter Physics
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Localization length and impurity dielectric susceptibility in the critical regime of the metal-insulator transition in homogeneously doped p-type Ge. / Watanabe, Michio; Itoh, Kohei M; Ootuka, Youiti; Haller, Eugene E.
In: Physical Review B - Condensed Matter and Materials Physics, Vol. 62, No. 4, 2000.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Localization length and impurity dielectric susceptibility in the critical regime of the metal-insulator transition in homogeneously doped p-type Ge
AU - Watanabe, Michio
AU - Itoh, Kohei M
AU - Ootuka, Youiti
AU - Haller, Eugene E.
PY - 2000
Y1 - 2000
N2 - We have determined the localization length ξ and the impurity dielectric susceptibility χimp as a function of Ga acceptor concentrations (N) in nominally uncompensated 70Ge:Ga just below the critical concentration (Nc) for the metal-insulator transition. Both ξ and χimp diverge at Nc according to the functions ξ∝(1 -N/Nc)-ν and χimp∝(Nc/N-1)-ζ, respectively, with ν=1.2±0.3 and ζ=2.3±0.6 for 0.99Nc<N<Nc. Outside of this region (N<0.99Nc), the values of the exponents drop to ν=0.33±0.03 and ζ=0.62±0.05. The effect of the small amount of compensating dopants that are present in our nominally uncompensated samples, may be responsible for the change of the critical exponents at N≈=0.99Nc.
AB - We have determined the localization length ξ and the impurity dielectric susceptibility χimp as a function of Ga acceptor concentrations (N) in nominally uncompensated 70Ge:Ga just below the critical concentration (Nc) for the metal-insulator transition. Both ξ and χimp diverge at Nc according to the functions ξ∝(1 -N/Nc)-ν and χimp∝(Nc/N-1)-ζ, respectively, with ν=1.2±0.3 and ζ=2.3±0.6 for 0.99Nc<N<Nc. Outside of this region (N<0.99Nc), the values of the exponents drop to ν=0.33±0.03 and ζ=0.62±0.05. The effect of the small amount of compensating dopants that are present in our nominally uncompensated samples, may be responsible for the change of the critical exponents at N≈=0.99Nc.
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M3 - Article
AN - SCOPUS:0347934267
VL - 62
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
SN - 1098-0121
IS - 4
ER -