Localization length and impurity dielectric susceptibility in the critical regime of the metal-insulator transition in homogeneously doped p-type Ge

Michio Watanabe, Kohei M. Itoh, Youiti Ootuka, Eugene E. Haller

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

We have determined the localization length (Formula presented) and the impurity dielectric susceptibility (Formula presented) as a function of Ga acceptor concentrations (N) in nominally uncompensated (Formula presented) just below the critical concentration (Formula presented) for the metal-insulator transition. Both (Formula presented) and (Formula presented) diverge at (Formula presented) according to the functions (Formula presented) and (Formula presented) respectively, with (Formula presented) and (Formula presented) for (Formula presented) Outside of this region (Formula presented) the values of the exponents drop to (Formula presented) and (Formula presented) The effect of the small amount of compensating dopants that are present in our nominally uncompensated samples, may be responsible for the change of the critical exponents at (Formula presented).

Original languageEnglish
Pages (from-to)R2255-R2258
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume62
Issue number4
DOIs
Publication statusPublished - 2000 Jan 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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