Location of P and As dopants and p-type doping of ZnO

P. Fons, A. V. Kolobov, Junji Tominaga, Bérangère Hyot, Bernard André

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Although ZnO has long been touted as an excellent material for UV light-emitting diodes and lasers, p-type doping still remains a challenge. In recent reports claiming that p-type doping can be achieved using nitrogen, arsenic and phosphorus, the spatial location of the dopants in the "successful" samples has not been identified. In this work, we present simulation results of x- ray absorption spectra for different locations of p-type dopants and argue that this technique is a powerful tool to experimentally investigate the location of group V dopants and to establish a correlation between the dopant location and corresponding conductivity type.

Original languageEnglish
Pages (from-to)1-5
Number of pages5
JournalJournal of Optoelectronics and Advanced Materials
Volume16
Issue number1-2
Publication statusPublished - 2014 Jan 1
Externally publishedYes

Keywords

  • P + As dopants
  • P-type ZnO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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  • Cite this

    Fons, P., Kolobov, A. V., Tominaga, J., Hyot, B., & André, B. (2014). Location of P and As dopants and p-type doping of ZnO. Journal of Optoelectronics and Advanced Materials, 16(1-2), 1-5.