Excitonic dephasing is investigated in InAs self-assembled quantum dots fabricated by the strain-compensation technique. The exciton ground-state emission is centered at the wavelength of 1420 nm at 5 K. Transient four-wave mixing measurements under resonant excitation clearly demonstrate a long dephasing time of 1.09 ns at 5 K, corresponding to the homogeneous broadening of 1.2 μeV. The extrapolated zero-temperature homogeneous broadening is limited only by the population lifetime of the exciton ground state. At slightly increased temperatures, the acoustic-phonon broadening becomes dominant on dephasing.
|Journal||Applied Physics Letters|
|Publication status||Published - 2006|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)