Long dephasing time in self-assembled InAs quantum dots at over 1.3 μm wavelength

Junko Hayase, K. Akahane, N. Yamamoto, M. Sasaki, M. Kujiraoka, K. Ema

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Excitonic dephasing is investigated in InAs self-assembled quantum dots fabricated by the strain-compensation technique. The exciton ground-state emission is centered at the wavelength of 1420 nm at 5 K. Transient four-wave mixing measurements under resonant excitation clearly demonstrate a long dephasing time of 1.09 ns at 5 K, corresponding to the homogeneous broadening of 1.2 μeV. The extrapolated zero-temperature homogeneous broadening is limited only by the population lifetime of the exciton ground state. At slightly increased temperatures, the acoustic-phonon broadening becomes dominant on dephasing.

Original languageEnglish
Article number261907
JournalApplied Physics Letters
Issue number26
Publication statusPublished - 2006
Externally publishedYes


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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