Longitudinal optical phonon relaxation in a GaAs/AlGaAs triple barrier tunnel diode at strong perpendicular magnetic fields

C. Wirner; Y. Awano; T. Mori; N. Yokoyama; T. Nakagawa; H. Bando; S. Muto

doi:10.1063/1.117042

Longitudinal optical phonon relaxation in a GaAs/AlGaAs triple barrier tunnel diode at strong perpendicular magnetic fields

C. Wirner, Y. Awano, T. Mori, N. Yokoyama, T. Nakagawa, H. Bando, S. Muto

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Longitudinal optical (LO) phonon relaxation is investigated in a GaAs/AlGaAs triple barrier tunnel diode at strong perpendicular magnetic fields. We observe LO-phonon assisted tunneling to the ground state as well as to Landau level states. Maxima in the LO-phonon assisted tunnel peak are found each time the LO-phonon energy matches multiple of the Landau level spacing. Corresponding maxima as well as parity effects are found in the integral tunnel conductance. The results indicate enhancement of LO-phonon assisted inter Landau level transitions with increasing magnetic field.

Original language	English
Pages (from-to)	1596-1598
Number of pages	3
Journal	Applied Physics Letters
Volume	69
Issue number	11
DOIs	https://doi.org/10.1063/1.117042
Publication status	Published - 1996 Sep 9
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.117042

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abstract = "Longitudinal optical (LO) phonon relaxation is investigated in a GaAs/AlGaAs triple barrier tunnel diode at strong perpendicular magnetic fields. We observe LO-phonon assisted tunneling to the ground state as well as to Landau level states. Maxima in the LO-phonon assisted tunnel peak are found each time the LO-phonon energy matches multiple of the Landau level spacing. Corresponding maxima as well as parity effects are found in the integral tunnel conductance. The results indicate enhancement of LO-phonon assisted inter Landau level transitions with increasing magnetic field.",

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T1 - Longitudinal optical phonon relaxation in a GaAs/AlGaAs triple barrier tunnel diode at strong perpendicular magnetic fields

AU - Wirner, C.

AU - Awano, Y.

AU - Mori, T.

AU - Yokoyama, N.

AU - Nakagawa, T.

AU - Bando, H.

AU - Muto, S.

PY - 1996/9/9

Y1 - 1996/9/9

N2 - Longitudinal optical (LO) phonon relaxation is investigated in a GaAs/AlGaAs triple barrier tunnel diode at strong perpendicular magnetic fields. We observe LO-phonon assisted tunneling to the ground state as well as to Landau level states. Maxima in the LO-phonon assisted tunnel peak are found each time the LO-phonon energy matches multiple of the Landau level spacing. Corresponding maxima as well as parity effects are found in the integral tunnel conductance. The results indicate enhancement of LO-phonon assisted inter Landau level transitions with increasing magnetic field.

AB - Longitudinal optical (LO) phonon relaxation is investigated in a GaAs/AlGaAs triple barrier tunnel diode at strong perpendicular magnetic fields. We observe LO-phonon assisted tunneling to the ground state as well as to Landau level states. Maxima in the LO-phonon assisted tunnel peak are found each time the LO-phonon energy matches multiple of the Landau level spacing. Corresponding maxima as well as parity effects are found in the integral tunnel conductance. The results indicate enhancement of LO-phonon assisted inter Landau level transitions with increasing magnetic field.

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Longitudinal optical phonon relaxation in a GaAs/AlGaAs triple barrier tunnel diode at strong perpendicular magnetic fields

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