Abstract
Longitudinal optical (LO) phonon relaxation is investigated in a GaAs/AlGaAs triple barrier tunnel diode at strong perpendicular magnetic fields. We observe LO-phonon assisted tunneling to the ground state as well as to Landau level states. Maxima in the LO-phonon assisted tunnel peak are found each time the LO-phonon energy matches multiple of the Landau level spacing. Corresponding maxima as well as parity effects are found in the integral tunnel conductance. The results indicate enhancement of LO-phonon assisted inter Landau level transitions with increasing magnetic field.
| Original language | English |
|---|---|
| Pages (from-to) | 1596-1598 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 69 |
| Issue number | 11 |
| Publication status | Published - 1996 Sep 9 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Longitudinal optical phonon relaxation in a GaAs/AlGaAs triple barrier tunnel diode at strong perpendicular magnetic fields. / Wirner, C.; Awano, Yuji; Mori, T.; Yokoyama, N.; Nakagawa, T.; Bando, H.; Muto, S.
In: Applied Physics Letters, Vol. 69, No. 11, 09.09.1996, p. 1596-1598.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Longitudinal optical phonon relaxation in a GaAs/AlGaAs triple barrier tunnel diode at strong perpendicular magnetic fields
AU - Wirner, C.
AU - Awano, Yuji
AU - Mori, T.
AU - Yokoyama, N.
AU - Nakagawa, T.
AU - Bando, H.
AU - Muto, S.
PY - 1996/9/9
Y1 - 1996/9/9
N2 - Longitudinal optical (LO) phonon relaxation is investigated in a GaAs/AlGaAs triple barrier tunnel diode at strong perpendicular magnetic fields. We observe LO-phonon assisted tunneling to the ground state as well as to Landau level states. Maxima in the LO-phonon assisted tunnel peak are found each time the LO-phonon energy matches multiple of the Landau level spacing. Corresponding maxima as well as parity effects are found in the integral tunnel conductance. The results indicate enhancement of LO-phonon assisted inter Landau level transitions with increasing magnetic field.
AB - Longitudinal optical (LO) phonon relaxation is investigated in a GaAs/AlGaAs triple barrier tunnel diode at strong perpendicular magnetic fields. We observe LO-phonon assisted tunneling to the ground state as well as to Landau level states. Maxima in the LO-phonon assisted tunnel peak are found each time the LO-phonon energy matches multiple of the Landau level spacing. Corresponding maxima as well as parity effects are found in the integral tunnel conductance. The results indicate enhancement of LO-phonon assisted inter Landau level transitions with increasing magnetic field.
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M3 - Article
AN - SCOPUS:0008140822
VL - 69
SP - 1596
EP - 1598
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 11
ER -