Longitudinal optical phonon relaxation in a GaAs/AlGaAs triple barrier tunnel diode at strong perpendicular magnetic fields

C. Wirner, Y. Awano, T. Mori, N. Yokoyama, T. Nakagawa, H. Bando, S. Muto

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Longitudinal optical (LO) phonon relaxation is investigated in a GaAs/AlGaAs triple barrier tunnel diode at strong perpendicular magnetic fields. We observe LO-phonon assisted tunneling to the ground state as well as to Landau level states. Maxima in the LO-phonon assisted tunnel peak are found each time the LO-phonon energy matches multiple of the Landau level spacing. Corresponding maxima as well as parity effects are found in the integral tunnel conductance. The results indicate enhancement of LO-phonon assisted inter Landau level transitions with increasing magnetic field.

Original languageEnglish
Pages (from-to)1596-1598
Number of pages3
JournalApplied Physics Letters
Volume69
Issue number11
DOIs
Publication statusPublished - 1996 Sep 9
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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