Abstract
Longitudinal optical (LO) phonon relaxation is investigated in a GaAs/AlGaAs triple barrier tunnel diode at strong perpendicular magnetic fields. We observe LO-phonon assisted tunneling to the ground state as well as to Landau level states. Maxima in the LO-phonon assisted tunnel peak are found each time the LO-phonon energy matches multiple of the Landau level spacing. Corresponding maxima as well as parity effects are found in the integral tunnel conductance. The results indicate enhancement of LO-phonon assisted inter Landau level transitions with increasing magnetic field.
| Original language | English |
|---|---|
| Pages (from-to) | 1596-1598 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 69 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 1996 Sep 9 |
| Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
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Wirner, C., Awano, Y., Mori, T., Yokoyama, N., Nakagawa, T., Bando, H., & Muto, S. (1996). Longitudinal optical phonon relaxation in a GaAs/AlGaAs triple barrier tunnel diode at strong perpendicular magnetic fields. Applied Physics Letters, 69(11), 1596-1598. https://doi.org/10.1063/1.117042