Abstract
Longitudinal optical (LO) phonon relaxation is investigated in a GaAs/AlGaAs triple barrier tunnel diode at strong perpendicular magnetic fields. We observe LO-phonon assisted tunneling to the ground state as well as to Landau level states. Maxima in the LO-phonon assisted tunnel peak are found each time the LO-phonon energy matches multiple of the Landau level spacing. Corresponding maxima as well as parity effects are found in the integral tunnel conductance. The results indicate enhancement of LO-phonon assisted inter Landau level transitions with increasing magnetic field.
Original language | English |
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Pages (from-to) | 1596-1598 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 69 |
Issue number | 11 |
DOIs | |
Publication status | Published - 1996 Sep 9 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)