Low defect ultra-thin fully strained-Ge MOSFET on relaxed Si with high mobility and low Band-To-Band-Tunneling (BTBT)

Tejas Krishnamohan, Zoran Krivokapic, Ken Uchida, Yoshio Nishi, Krishna C. Saraswat

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    47 Citations (Scopus)

    Abstract

    For the first time, the tradeoffs between higher mobility (smaller bandgap) channel and lower Band-To-Band-Tunneling (BTBT) leakage have been investigated through detailed experiments and simulations. The resulting optimal structure obtained was an ultra-thin, low defect, 2nm fully strained Ge epi channel on relaxed Si, with a 4nm Si cap layer. The fabricated device shows very high mobility enhancements >3.5X over bulk Si devices, 2X mobility enhancement and >10X BTBT reduction over 4nm strained Ge and surface channel 50% strained SiGe devices.

    Original languageEnglish
    Title of host publication2005 Symposium on VLSI Technology, Digest of Technical Papers
    Pages82-83
    Number of pages2
    DOIs
    Publication statusPublished - 2005 Dec 1
    Event2005 Symposium on VLSI Technology - Kyoto, Japan
    Duration: 2005 Jun 142005 Jun 14

    Publication series

    NameDigest of Technical Papers - Symposium on VLSI Technology
    Volume2005
    ISSN (Print)0743-1562

    Other

    Other2005 Symposium on VLSI Technology
    CountryJapan
    CityKyoto
    Period05/6/1405/6/14

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering

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  • Cite this

    Krishnamohan, T., Krivokapic, Z., Uchida, K., Nishi, Y., & Saraswat, K. C. (2005). Low defect ultra-thin fully strained-Ge MOSFET on relaxed Si with high mobility and low Band-To-Band-Tunneling (BTBT). In 2005 Symposium on VLSI Technology, Digest of Technical Papers (pp. 82-83). [1469221] (Digest of Technical Papers - Symposium on VLSI Technology; Vol. 2005). https://doi.org/10.1109/.2005.1469221