Low defect ultra-thin fully strained-Ge MOSFET on relaxed Si with high mobility and low Band-To-Band-Tunneling (BTBT)

Tejas Krishnamohan; Zoran Krivokapic; Ken Uchida; Yoshio Nishi; Krishna C. Saraswat

doi:10.1109/.2005.1469221

Low defect ultra-thin fully strained-Ge MOSFET on relaxed Si with high mobility and low Band-To-Band-Tunneling (BTBT)

Tejas Krishnamohan, Zoran Krivokapic, Ken Uchida, Yoshio Nishi, Krishna C. Saraswat

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

51 Citations (Scopus)

Abstract

For the first time, the tradeoffs between higher mobility (smaller bandgap) channel and lower Band-To-Band-Tunneling (BTBT) leakage have been investigated through detailed experiments and simulations. The resulting optimal structure obtained was an ultra-thin, low defect, 2nm fully strained Ge epi channel on relaxed Si, with a 4nm Si cap layer. The fabricated device shows very high mobility enhancements >3.5X over bulk Si devices, 2X mobility enhancement and >10X BTBT reduction over 4nm strained Ge and surface channel 50% strained SiGe devices.

Original language	English
Title of host publication	2005 Symposium on VLSI Technology, Digest of Technical Papers
Pages	82-83
Number of pages	2
DOIs	https://doi.org/10.1109/.2005.1469221
Publication status	Published - 2005
Externally published	Yes
Event	2005 Symposium on VLSI Technology - Kyoto, Japan Duration: 2005 Jun 14 → 2005 Jun 14

Publication series

Name	Digest of Technical Papers - Symposium on VLSI Technology
Volume	2005
ISSN (Print)	0743-1562

Other

Other	2005 Symposium on VLSI Technology
Country/Territory	Japan
City	Kyoto
Period	05/6/14 → 05/6/14

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1109/.2005.1469221

Cite this

Krishnamohan, T., Krivokapic, Z., Uchida, K., Nishi, Y., & Saraswat, K. C. (2005). Low defect ultra-thin fully strained-Ge MOSFET on relaxed Si with high mobility and low Band-To-Band-Tunneling (BTBT). In 2005 Symposium on VLSI Technology, Digest of Technical Papers (pp. 82-83). [1469221] (Digest of Technical Papers - Symposium on VLSI Technology; Vol. 2005). https://doi.org/10.1109/.2005.1469221

Low defect ultra-thin fully strained-Ge MOSFET on relaxed Si with high mobility and low Band-To-Band-Tunneling (BTBT). / Krishnamohan, Tejas; Krivokapic, Zoran; Uchida, Ken et al.

2005 Symposium on VLSI Technology, Digest of Technical Papers. 2005. p. 82-83 1469221 (Digest of Technical Papers - Symposium on VLSI Technology; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Krishnamohan, T, Krivokapic, Z, Uchida, K, Nishi, Y & Saraswat, KC 2005, Low defect ultra-thin fully strained-Ge MOSFET on relaxed Si with high mobility and low Band-To-Band-Tunneling (BTBT). in 2005 Symposium on VLSI Technology, Digest of Technical Papers., 1469221, Digest of Technical Papers - Symposium on VLSI Technology, vol. 2005, pp. 82-83, 2005 Symposium on VLSI Technology, Kyoto, Japan, 05/6/14. https://doi.org/10.1109/.2005.1469221

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Low defect ultra-thin fully strained-Ge MOSFET on relaxed Si with high mobility and low Band-To-Band-Tunneling (BTBT)

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