Low defect ultra-thin fully strained-Ge MOSFET on relaxed Si with high mobility and low Band-To-Band-Tunneling (BTBT)

Tejas Krishnamohan, Zoran Krivokapic, Ken Uchida, Yoshio Nishi, Krishna C. Saraswat

Research output: Chapter in Book/Report/Conference proceedingConference contribution

47 Citations (Scopus)

Abstract

For the first time, the tradeoffs between higher mobility (smaller bandgap) channel and lower Band-To-Band-Tunneling (BTBT) leakage have been investigated through detailed experiments and simulations. The resulting optimal structure obtained was an ultra-thin, low defect, 2nm fully strained Ge epi channel on relaxed Si, with a 4nm Si cap layer. The fabricated device shows very high mobility enhancements >3.5X over bulk Si devices, 2X mobility enhancement and >10X BTBT reduction over 4nm strained Ge and surface channel 50% strained SiGe devices.

Original languageEnglish
Title of host publicationDigest of Technical Papers - Symposium on VLSI Technology
Pages82-83
Number of pages2
Volume2005
DOIs
Publication statusPublished - 2005
Externally publishedYes
Event2005 Symposium on VLSI Technology - Kyoto, Japan
Duration: 2005 Jun 142005 Jun 14

Other

Other2005 Symposium on VLSI Technology
CountryJapan
CityKyoto
Period05/6/1405/6/14

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Energy gap
Defects
Experiments

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Krishnamohan, T., Krivokapic, Z., Uchida, K., Nishi, Y., & Saraswat, K. C. (2005). Low defect ultra-thin fully strained-Ge MOSFET on relaxed Si with high mobility and low Band-To-Band-Tunneling (BTBT). In Digest of Technical Papers - Symposium on VLSI Technology (Vol. 2005, pp. 82-83). [1469221] https://doi.org/10.1109/.2005.1469221

Low defect ultra-thin fully strained-Ge MOSFET on relaxed Si with high mobility and low Band-To-Band-Tunneling (BTBT). / Krishnamohan, Tejas; Krivokapic, Zoran; Uchida, Ken; Nishi, Yoshio; Saraswat, Krishna C.

Digest of Technical Papers - Symposium on VLSI Technology. Vol. 2005 2005. p. 82-83 1469221.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Krishnamohan, T, Krivokapic, Z, Uchida, K, Nishi, Y & Saraswat, KC 2005, Low defect ultra-thin fully strained-Ge MOSFET on relaxed Si with high mobility and low Band-To-Band-Tunneling (BTBT). in Digest of Technical Papers - Symposium on VLSI Technology. vol. 2005, 1469221, pp. 82-83, 2005 Symposium on VLSI Technology, Kyoto, Japan, 05/6/14. https://doi.org/10.1109/.2005.1469221
Krishnamohan T, Krivokapic Z, Uchida K, Nishi Y, Saraswat KC. Low defect ultra-thin fully strained-Ge MOSFET on relaxed Si with high mobility and low Band-To-Band-Tunneling (BTBT). In Digest of Technical Papers - Symposium on VLSI Technology. Vol. 2005. 2005. p. 82-83. 1469221 https://doi.org/10.1109/.2005.1469221
Krishnamohan, Tejas ; Krivokapic, Zoran ; Uchida, Ken ; Nishi, Yoshio ; Saraswat, Krishna C. / Low defect ultra-thin fully strained-Ge MOSFET on relaxed Si with high mobility and low Band-To-Band-Tunneling (BTBT). Digest of Technical Papers - Symposium on VLSI Technology. Vol. 2005 2005. pp. 82-83
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