Low defect ultra-thin fully strained-Ge MOSFET on relaxed Si with high mobility and low Band-To-Band-Tunneling (BTBT)

Tejas Krishnamohan, Zoran Krivokapic, Ken Uchida, Yoshio Nishi, Krishna C. Saraswat

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    50 Citations (Scopus)

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    Engineering & Materials Science