Low-density inas quantum dots grown on InP(001) using solid-source molecular beam epitaxy with a post-growth annealing process

Ryosuke Kubota, Toshiharu Saiki, Philippe Regreny, Aziz Benamrouche, Michel Gendry

Research output: Contribution to journalArticle

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Abstract

Low-density InAs quantum dots (QDs) with a large lateral size were grown on InP(001) by solid-source molecular beam epitaxy with a post-growth annealing process. A decrease in QD density with the amount of InAs deposited was shown by atomic force microscopy, and a density of 5 × 108 QDs/cm 2 was obtained for 0.8 monolayer InAs deposition. Moreover, we found that the growth mechanism of QDs changed significantly depending on the amount of InAs deposited in the vicinity of critical thickness, even if the same annealing condition was applied. Near-field photoluminescence spectroscopy of single QDs demonstrated the high optical qualities of low-density QDs.

Original languageEnglish
Pages (from-to)412011-412014
Number of pages4
JournalJapanese Journal of Applied Physics
Volume49
Issue number4 PART 1
DOIs
Publication statusPublished - 2010 Apr

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Molecular beam epitaxy
Semiconductor quantum dots
molecular beam epitaxy
quantum dots
Annealing
annealing
Photoluminescence spectroscopy
Monolayers
Atomic force microscopy
near fields
atomic force microscopy
photoluminescence
spectroscopy

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Low-density inas quantum dots grown on InP(001) using solid-source molecular beam epitaxy with a post-growth annealing process. / Kubota, Ryosuke; Saiki, Toshiharu; Regreny, Philippe; Benamrouche, Aziz; Gendry, Michel.

In: Japanese Journal of Applied Physics, Vol. 49, No. 4 PART 1, 04.2010, p. 412011-412014.

Research output: Contribution to journalArticle

Kubota, Ryosuke ; Saiki, Toshiharu ; Regreny, Philippe ; Benamrouche, Aziz ; Gendry, Michel. / Low-density inas quantum dots grown on InP(001) using solid-source molecular beam epitaxy with a post-growth annealing process. In: Japanese Journal of Applied Physics. 2010 ; Vol. 49, No. 4 PART 1. pp. 412011-412014.
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