Low-density inas quantum dots grown on InP(001) using solid-source molecular beam epitaxy with a post-growth annealing process

Ryosuke Kubota, Toshiharu Saiki, Philippe Regreny, Aziz Benamrouche, Michel Gendry

    Research output: Contribution to journalArticle

    13 Citations (Scopus)

    Abstract

    Low-density InAs quantum dots (QDs) with a large lateral size were grown on InP(001) by solid-source molecular beam epitaxy with a post-growth annealing process. A decrease in QD density with the amount of InAs deposited was shown by atomic force microscopy, and a density of 5 × 108 QDs/cm 2 was obtained for 0.8 monolayer InAs deposition. Moreover, we found that the growth mechanism of QDs changed significantly depending on the amount of InAs deposited in the vicinity of critical thickness, even if the same annealing condition was applied. Near-field photoluminescence spectroscopy of single QDs demonstrated the high optical qualities of low-density QDs.

    Original languageEnglish
    Pages (from-to)412011-412014
    Number of pages4
    JournalJapanese journal of applied physics
    Volume49
    Issue number4 PART 1
    DOIs
    Publication statusPublished - 2010 Apr

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

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