Low-energy (100 eV) carbon ion (C+) irradiation during molecular beam epitaxy of GaAs was carried out using combined ion beam and molecular beam epitaxy (CIBMBE) technology for the growth temperature (Tg) range between 500 and 590°C. Carbon incorporation was identified by both low-temperature (2 K) photoluminescence and Hall effect measurements. In the PL spectra, two well-established specific emissions, "g" and [g-g], which are closely related to acceptor impurities, were observed for the above T g range. The results indicate that carbon was both optically and electrically well activated as an acceptor even at Tg as low as 500°C. Maximum net hole concentration, ∥NA-N D∥, as high as 3×1018 cm-3 was obtained with no appreciable radiation damages and undesired impurity contamination.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - 1993|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)