Low energy (100 eV) C+ ion doping into GaAs using combined ion beam and molecular beam epitaxial technology

Tsutomu Iida, Yunosuke Makita, Shinji Kimura, Stefan Winter, Akimasa Yamada, Hajime Shibata, Akira Obara, Shigeru Niki, Paul Fons, Yushin Tsai, Shin Ichiro Uekusa

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Abstract

Low-energy (100 eV) carbon ion (C+) irradiation during molecular beam epitaxy of GaAs was carried out using combined ion beam and molecular beam epitaxy (CIBMBE) technology for the growth temperature (Tg) range between 500 and 590°C. Carbon incorporation was identified by both low-temperature (2 K) photoluminescence and Hall effect measurements. In the PL spectra, two well-established specific emissions, "g" and [g-g], which are closely related to acceptor impurities, were observed for the above T g range. The results indicate that carbon was both optically and electrically well activated as an acceptor even at Tg as low as 500°C. Maximum net hole concentration, ∥NA-N D∥, as high as 3×1018 cm-3 was obtained with no appreciable radiation damages and undesired impurity contamination.

Original languageEnglish
Pages (from-to)1951-1953
Number of pages3
JournalApplied Physics Letters
Volume63
Issue number14
DOIs
Publication statusPublished - 1993 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Iida, T., Makita, Y., Kimura, S., Winter, S., Yamada, A., Shibata, H., Obara, A., Niki, S., Fons, P., Tsai, Y., & Uekusa, S. I. (1993). Low energy (100 eV) C+ ion doping into GaAs using combined ion beam and molecular beam epitaxial technology. Applied Physics Letters, 63(14), 1951-1953. https://doi.org/10.1063/1.110611