Low energy (100 eV) C+ ion doping into GaAs using combined ion beam and molecular beam epitaxial technology

Tsutomu Iida; Yunosuke Makita; Shinji Kimura; Stefan Winter; Akimasa Yamada; Hajime Shibata; Akira Obara; Shigeru Niki; Paul Fons; Yushin Tsai; Shin Ichiro Uekusa

doi:10.1063/1.110611

Low energy (100 eV) C⁺ ion doping into GaAs using combined ion beam and molecular beam epitaxial technology

Tsutomu Iida, Yunosuke Makita, Shinji Kimura, Stefan Winter, Akimasa Yamada, Hajime Shibata, Akira Obara, Shigeru Niki, Paul Fons, Yushin Tsai, Shin Ichiro Uekusa

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Low-energy (100 eV) carbon ion (C⁺) irradiation during molecular beam epitaxy of GaAs was carried out using combined ion beam and molecular beam epitaxy (CIBMBE) technology for the growth temperature (T_g) range between 500 and 590°C. Carbon incorporation was identified by both low-temperature (2 K) photoluminescence and Hall effect measurements. In the PL spectra, two well-established specific emissions, "g" and [g-g], which are closely related to acceptor impurities, were observed for the above T _g range. The results indicate that carbon was both optically and electrically well activated as an acceptor even at T_g as low as 500°C. Maximum net hole concentration, ∥N_A-N _D∥, as high as 3×10¹⁸ cm^-3 was obtained with no appreciable radiation damages and undesired impurity contamination.

Original language	English
Pages (from-to)	1951-1953
Number of pages	3
Journal	Applied Physics Letters
Volume	63
Issue number	14
DOIs	https://doi.org/10.1063/1.110611
Publication status	Published - 1993
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.110611

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title = "Low energy (100 eV) C+ ion doping into GaAs using combined ion beam and molecular beam epitaxial technology",

abstract = "Low-energy (100 eV) carbon ion (C+) irradiation during molecular beam epitaxy of GaAs was carried out using combined ion beam and molecular beam epitaxy (CIBMBE) technology for the growth temperature (Tg) range between 500 and 590°C. Carbon incorporation was identified by both low-temperature (2 K) photoluminescence and Hall effect measurements. In the PL spectra, two well-established specific emissions, {"}g{"} and [g-g], which are closely related to acceptor impurities, were observed for the above T g range. The results indicate that carbon was both optically and electrically well activated as an acceptor even at Tg as low as 500°C. Maximum net hole concentration, ∥NA-N D∥, as high as 3×1018 cm-3 was obtained with no appreciable radiation damages and undesired impurity contamination.",

author = "Tsutomu Iida and Yunosuke Makita and Shinji Kimura and Stefan Winter and Akimasa Yamada and Hajime Shibata and Akira Obara and Shigeru Niki and Paul Fons and Yushin Tsai and Uekusa, {Shin Ichiro}",

year = "1993",

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T1 - Low energy (100 eV) C+ ion doping into GaAs using combined ion beam and molecular beam epitaxial technology

AU - Iida, Tsutomu

AU - Makita, Yunosuke

AU - Kimura, Shinji

AU - Winter, Stefan

AU - Yamada, Akimasa

AU - Shibata, Hajime

AU - Obara, Akira

AU - Niki, Shigeru

AU - Fons, Paul

AU - Tsai, Yushin

AU - Uekusa, Shin Ichiro

PY - 1993

Y1 - 1993

N2 - Low-energy (100 eV) carbon ion (C+) irradiation during molecular beam epitaxy of GaAs was carried out using combined ion beam and molecular beam epitaxy (CIBMBE) technology for the growth temperature (Tg) range between 500 and 590°C. Carbon incorporation was identified by both low-temperature (2 K) photoluminescence and Hall effect measurements. In the PL spectra, two well-established specific emissions, "g" and [g-g], which are closely related to acceptor impurities, were observed for the above T g range. The results indicate that carbon was both optically and electrically well activated as an acceptor even at Tg as low as 500°C. Maximum net hole concentration, ∥NA-N D∥, as high as 3×1018 cm-3 was obtained with no appreciable radiation damages and undesired impurity contamination.

AB - Low-energy (100 eV) carbon ion (C+) irradiation during molecular beam epitaxy of GaAs was carried out using combined ion beam and molecular beam epitaxy (CIBMBE) technology for the growth temperature (Tg) range between 500 and 590°C. Carbon incorporation was identified by both low-temperature (2 K) photoluminescence and Hall effect measurements. In the PL spectra, two well-established specific emissions, "g" and [g-g], which are closely related to acceptor impurities, were observed for the above T g range. The results indicate that carbon was both optically and electrically well activated as an acceptor even at Tg as low as 500°C. Maximum net hole concentration, ∥NA-N D∥, as high as 3×1018 cm-3 was obtained with no appreciable radiation damages and undesired impurity contamination.

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JO - Applied Physics Letters

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Low energy (100 eV) C⁺ ion doping into GaAs using combined ion beam and molecular beam epitaxial technology

Abstract

ASJC Scopus subject areas

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