Low-frequency dielectric relaxation in amorphous MoTe2layers obtained by RF magnetron sputtering

Rene Castro, Sergej Khachaturov, Aleksei Kononov, Yuta Saito, Paul Fons, Nadezhda Anisimova, Alexander Kolobov

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The results of a study on dielectric relaxation in thin layers of amorphous MoTe2 using dielectric spectroscopy are presented. Dipole-relaxation polarization has been observed. The activation energy of the relaxation process was calculated to be Ea = (0.44±0.02) eV. The dispersion of the dielectric constant and the presence of a maximum of dielectric losses in the studied MoTe2 films may be due to the disordered structure of the amorphous material and the presence of chalcogen vacancies.

Original languageEnglish
Title of host publicationProceedings of the XV International Conference "Physics of Dielectrics"
EditorsYuriy Gorokhovatsky, Dmitry Temnov, Viktoria Kapralova, Nicolay Sudar, Elena Velichko
PublisherAmerican Institute of Physics Inc.
ISBN (Electronic)9780735440449
DOIs
Publication statusPublished - 2020 Dec 1
Event15th International Conference on Physics of Dielectrics, Dielectrics 2020 - St. Petersburg, Russian Federation
Duration: 2020 Oct 52020 Oct 8

Publication series

NameAIP Conference Proceedings
Volume2308
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

Conference15th International Conference on Physics of Dielectrics, Dielectrics 2020
CountryRussian Federation
CitySt. Petersburg
Period20/10/520/10/8

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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