Low operating voltage organic transistors and circuits with anodic titanium oxide and phosphonic acid self-assembled monolayer dielectrics

Hiroaki Jinno; Tomoyuki Yokota; Naoji Matsuhisa; Martin Kaltenbrunner; Yutaro Tachibana; Takao Someya

doi:10.1016/j.orgel.2016.10.034

Low operating voltage organic transistors and circuits with anodic titanium oxide and phosphonic acid self-assembled monolayer dielectrics

Hiroaki Jinno, Tomoyuki Yokota, Naoji Matsuhisa, Martin Kaltenbrunner, Yutaro Tachibana, Takao Someya

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

We fabricated organic thin-film transistors (OTFTs) with sub-1 V driving voltage enabled by a hybrid dielectric comprising high-k amorphous titanium oxide (TiO_x) and a phosphonic acid self-assembled monolayer (SAM). The p-type OTFTs show a high on/off ratio (10⁵), a near 0 V threshold voltage (−0.09 V), and a high mobility of 1.2 cm²/Vs when operated at 1 V. These OTFTs are readily employed in circuit applications, and we show pseudo-CMOS and CMOS inverters operating at 0.5 V as basic building blocks of low-voltage advanced organic logic circuits. We fabricate a five-stage CMOS ring oscillator that displays clear oscillation characteristics at a driving voltage of 0.5 V to highlight the potential of our hybrid dielectric for ultra-low-voltage integrated plastic circuitry.

Original language	English
Pages (from-to)	58-64
Number of pages	7
Journal	Organic Electronics
Volume	40
DOIs	https://doi.org/10.1016/j.orgel.2016.10.034
Publication status	Published - 2017 Jan 1
Externally published	Yes

Keywords

Low driving-voltage
Organic thin-film transistors
Ring oscillators

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Biomaterials
Chemistry(all)
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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Low operating voltage organic transistors and circuits with anodic titanium oxide and phosphonic acid self-assembled monolayer dielectrics. / Jinno, Hiroaki; Yokota, Tomoyuki; Matsuhisa, Naoji; Kaltenbrunner, Martin; Tachibana, Yutaro; Someya, Takao.

In: Organic Electronics, Vol. 40, 01.01.2017, p. 58-64.

Research output: Contribution to journal › Article › peer-review

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abstract = "We fabricated organic thin-film transistors (OTFTs) with sub-1 V driving voltage enabled by a hybrid dielectric comprising high-k amorphous titanium oxide (TiOx) and a phosphonic acid self-assembled monolayer (SAM). The p-type OTFTs show a high on/off ratio (105), a near 0 V threshold voltage (−0.09 V), and a high mobility of 1.2 cm2/Vs when operated at 1 V. These OTFTs are readily employed in circuit applications, and we show pseudo-CMOS and CMOS inverters operating at 0.5 V as basic building blocks of low-voltage advanced organic logic circuits. We fabricate a five-stage CMOS ring oscillator that displays clear oscillation characteristics at a driving voltage of 0.5 V to highlight the potential of our hybrid dielectric for ultra-low-voltage integrated plastic circuitry.",

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author = "Hiroaki Jinno and Tomoyuki Yokota and Naoji Matsuhisa and Martin Kaltenbrunner and Yutaro Tachibana and Takao Someya",

note = "Funding Information: The authors are indebted to Dr. Kenjiro Fukuda, Dr. Xu Xiaomin, and Professor Tsuyoshi Sekitani, for fruitful discussion. This work is financially supported by JST ERATO Someya Bio-Harmonized Electronics Project. ",

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AU - Jinno, Hiroaki

AU - Yokota, Tomoyuki

AU - Matsuhisa, Naoji

AU - Kaltenbrunner, Martin

AU - Tachibana, Yutaro

AU - Someya, Takao

N1 - Funding Information: The authors are indebted to Dr. Kenjiro Fukuda, Dr. Xu Xiaomin, and Professor Tsuyoshi Sekitani, for fruitful discussion. This work is financially supported by JST ERATO Someya Bio-Harmonized Electronics Project.

PY - 2017/1/1

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AB - We fabricated organic thin-film transistors (OTFTs) with sub-1 V driving voltage enabled by a hybrid dielectric comprising high-k amorphous titanium oxide (TiOx) and a phosphonic acid self-assembled monolayer (SAM). The p-type OTFTs show a high on/off ratio (105), a near 0 V threshold voltage (−0.09 V), and a high mobility of 1.2 cm2/Vs when operated at 1 V. These OTFTs are readily employed in circuit applications, and we show pseudo-CMOS and CMOS inverters operating at 0.5 V as basic building blocks of low-voltage advanced organic logic circuits. We fabricate a five-stage CMOS ring oscillator that displays clear oscillation characteristics at a driving voltage of 0.5 V to highlight the potential of our hybrid dielectric for ultra-low-voltage integrated plastic circuitry.

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