Low power and fast electro-optic silicon modulator with lateral p-i-n embedded photonic crystal nanocavity

Takasumi Tanabe, Katsuhiko Nishiguchi, Eiichi Kuramochi, Masaya Notomi

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We have fabricated high-Q photonic crystal nanocavities with a lateral p-i-n structure to demonstrate low-power and high-speed electrooptic modulation in a silicon chip. GHz operation is demonstrated at a very low (μ W level) operating power, which is about 4.6 times lower than that reported for other cavities in silicon. This low-power operation is due to the small size and high-Q of the photonic crystal nanocavity.

Original languageEnglish
Pages (from-to)22505-22513
Number of pages9
JournalOptics Express
Issue number25
Publication statusPublished - 2009 Dec 7
Externally publishedYes


ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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