Low power and fast electro-optic silicon modulator with lateral p-i-n embedded photonic crystal nanocavity

Takasumi Tanabe, Katsuhiko Nishiguchi, Eiichi Kuramochi, Masaya Notomi

Research output: Contribution to journalArticle

93 Citations (Scopus)

Abstract

We have fabricated high-Q photonic crystal nanocavities with a lateral p-i-n structure to demonstrate low-power and high-speed electrooptic modulation in a silicon chip. GHz operation is demonstrated at a very low (μ W level) operating power, which is about 4.6 times lower than that reported for other cavities in silicon. This low-power operation is due to the small size and high-Q of the photonic crystal nanocavity.

Original languageEnglish
Pages (from-to)22505-22513
Number of pages9
JournalOptics Express
Volume17
Issue number25
DOIs
Publication statusPublished - 2009 Dec 7
Externally publishedYes

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electro-optics
modulators
Q factors
photonics
silicon
crystals
chips
high speed
modulation
cavities

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Low power and fast electro-optic silicon modulator with lateral p-i-n embedded photonic crystal nanocavity. / Tanabe, Takasumi; Nishiguchi, Katsuhiko; Kuramochi, Eiichi; Notomi, Masaya.

In: Optics Express, Vol. 17, No. 25, 07.12.2009, p. 22505-22513.

Research output: Contribution to journalArticle

Tanabe, Takasumi ; Nishiguchi, Katsuhiko ; Kuramochi, Eiichi ; Notomi, Masaya. / Low power and fast electro-optic silicon modulator with lateral p-i-n embedded photonic crystal nanocavity. In: Optics Express. 2009 ; Vol. 17, No. 25. pp. 22505-22513.
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