TY - GEN
T1 - Low-Power and ppm-Level Detection of Gas Molecules by Integrated Metal Nanosheets
AU - Tanaka, T.
AU - Tabuchi, K.
AU - Tatehora, K.
AU - Shiiki, Y.
AU - Nakagawa, S.
AU - Takahashi, T.
AU - Shimizu, R.
AU - Ishikuro, H.
AU - Kuroda, T.
AU - Yanagida, T.
AU - Uchida, K.
N1 - Funding Information:
This work was partly supported by JST CREST Grant Number JPMJCR1331.
PY - 2019/6
Y1 - 2019/6
N2 - Ppm-level hydrogen and ammonia in air were recognized by low-power, integrated sensors consisting of catalytic metal nanosheets. Thermal energy necessary for catalytic reactions were given by Joule heating not by external heaters. The ther-mal-aware design of sensors reduces the power consumption to 0.14 mW. The low-power and small-area properties enable large-scale, on-chip integration of molecular sensors, which will be useful in IoT era. A sensor array was successfully connected to a platform with wireless connectivity.
AB - Ppm-level hydrogen and ammonia in air were recognized by low-power, integrated sensors consisting of catalytic metal nanosheets. Thermal energy necessary for catalytic reactions were given by Joule heating not by external heaters. The ther-mal-aware design of sensors reduces the power consumption to 0.14 mW. The low-power and small-area properties enable large-scale, on-chip integration of molecular sensors, which will be useful in IoT era. A sensor array was successfully connected to a platform with wireless connectivity.
KW - Gas Sensor
KW - Nanosheet
KW - Self-Heating
UR - http://www.scopus.com/inward/record.url?scp=85070303107&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85070303107&partnerID=8YFLogxK
U2 - 10.23919/VLSIT.2019.8776552
DO - 10.23919/VLSIT.2019.8776552
M3 - Conference contribution
AN - SCOPUS:85070303107
T3 - Digest of Technical Papers - Symposium on VLSI Technology
SP - T158-T159
BT - 2019 Symposium on VLSI Technology, VLSI Technology 2019 - Digest of Technical Papers
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 39th Symposium on VLSI Technology, VLSI Technology 2019
Y2 - 9 June 2019 through 14 June 2019
ER -