Low-pressure metalorganic chemical vapor deposition of a CuGaSe2/CuAlSe2 heterostructure

Shigefusa Chichibu, Ryo Sudo, Nobuhide Yoshida, Yoshiyuki Harada, Mei Uchida, Satoru Matsumoto, Hirofumi Higuchi

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

A single-heterostructure of CuGaSe2/CuAlSe2 chalcopyrite semiconductors was successfully grown epitaxially on a GaAs(001) substrate using a low-pressure metal organic chemical vapor deposition technique. The valence-band discontinuity for the CuGaSe2/CuAlSe2 heterointerface was estimated to be 0.8 ± 0.1 eV by means of X-ray photoelectron spectroscopy. The CuGaSe2/CuAlSe2 structure was found to have the straddling-type heterointerface, and the band discontinuity was found to be distributed mainly in the valence band.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume33
Issue number3 A
Publication statusPublished - 1994 Mar 1
Externally publishedYes

Fingerprint

Low pressure chemical vapor deposition
Metallorganic chemical vapor deposition
Valence bands
metalorganic chemical vapor deposition
Heterojunctions
low pressure
Organic chemicals
discontinuity
valence
Chemical vapor deposition
X ray photoelectron spectroscopy
Semiconductor materials
Substrates
Metals
photoelectron spectroscopy
x rays

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Chichibu, S., Sudo, R., Yoshida, N., Harada, Y., Uchida, M., Matsumoto, S., & Higuchi, H. (1994). Low-pressure metalorganic chemical vapor deposition of a CuGaSe2/CuAlSe2 heterostructure. Japanese Journal of Applied Physics, Part 2: Letters, 33(3 A).

Low-pressure metalorganic chemical vapor deposition of a CuGaSe2/CuAlSe2 heterostructure. / Chichibu, Shigefusa; Sudo, Ryo; Yoshida, Nobuhide; Harada, Yoshiyuki; Uchida, Mei; Matsumoto, Satoru; Higuchi, Hirofumi.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 33, No. 3 A, 01.03.1994.

Research output: Contribution to journalArticle

Chichibu, S, Sudo, R, Yoshida, N, Harada, Y, Uchida, M, Matsumoto, S & Higuchi, H 1994, 'Low-pressure metalorganic chemical vapor deposition of a CuGaSe2/CuAlSe2 heterostructure', Japanese Journal of Applied Physics, Part 2: Letters, vol. 33, no. 3 A.
Chichibu, Shigefusa ; Sudo, Ryo ; Yoshida, Nobuhide ; Harada, Yoshiyuki ; Uchida, Mei ; Matsumoto, Satoru ; Higuchi, Hirofumi. / Low-pressure metalorganic chemical vapor deposition of a CuGaSe2/CuAlSe2 heterostructure. In: Japanese Journal of Applied Physics, Part 2: Letters. 1994 ; Vol. 33, No. 3 A.
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AU - Uchida, Mei

AU - Matsumoto, Satoru

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