Low-pressure metalorganic chemical vapor deposition of cualse2 epitaxial films

Shigefusa Chichibu; Sho Shirakata; Ryo Sudo; Mei Uchida; Yoshiyuki Harada; Satoru Matsumoto; Hirofumi Higuchi; Shigehiro Isomura

doi:10.7567/JJAPS.32S3.139

Low-pressure metalorganic chemical vapor deposition of cualse₂ epitaxial films

Shigefusa Chichibu, Sho Shirakata, Ryo Sudo, Mei Uchida, Yoshiyuki Harada, Satoru Matsumoto, Hirofumi Higuchi, Shigehiro Isomura

Department of System Design Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

A low-pressure metalorganic chemical vapor deposition of CuAlSe₂ epitaxial films was performed using several kinds of metalorganic precursors. The film quality varied remarkably depending on the source precursors. Free exciton emission at 2.739 eV was observed in the CuAlSe₂ films grown using triisobutylaluminium and diethylselenium, both ofwhich have lower decomposition temperatures.

Original language	English
Pages (from-to)	139-141
Number of pages	3
Journal	Japanese journal of applied physics
Volume	32
Issue number	S3
DOIs	https://doi.org/10.7567/JJAPS.32S3.139
Publication status	Published - 1993 Jan

Keywords

Chalcopyrite compounds
CuAISe2
Exciton luminescence
LP-MOCVD
Triisobutylaluminium

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.7567/JJAPS.32S3.139

Cite this

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title = "Low-pressure metalorganic chemical vapor deposition of cualse2 epitaxial films",

abstract = "A low-pressure metalorganic chemical vapor deposition of CuAlSe2 epitaxial films was performed using several kinds of metalorganic precursors. The film quality varied remarkably depending on the source precursors. Free exciton emission at 2.739 eV was observed in the CuAlSe2 films grown using triisobutylaluminium and diethylselenium, both ofwhich have lower decomposition temperatures.",

keywords = "Chalcopyrite compounds, CuAISe2, Exciton luminescence, LP-MOCVD, Triisobutylaluminium",

author = "Shigefusa Chichibu and Sho Shirakata and Ryo Sudo and Mei Uchida and Yoshiyuki Harada and Satoru Matsumoto and Hirofumi Higuchi and Shigehiro Isomura",

year = "1993",

month = jan,

doi = "10.7567/JJAPS.32S3.139",

language = "English",

volume = "32",

pages = "139--141",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

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publisher = "Japan Society of Applied Physics",

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T1 - Low-pressure metalorganic chemical vapor deposition of cualse2 epitaxial films

AU - Chichibu, Shigefusa

AU - Shirakata, Sho

AU - Sudo, Ryo

AU - Uchida, Mei

AU - Harada, Yoshiyuki

AU - Matsumoto, Satoru

AU - Higuchi, Hirofumi

AU - Isomura, Shigehiro

PY - 1993/1

Y1 - 1993/1

N2 - A low-pressure metalorganic chemical vapor deposition of CuAlSe2 epitaxial films was performed using several kinds of metalorganic precursors. The film quality varied remarkably depending on the source precursors. Free exciton emission at 2.739 eV was observed in the CuAlSe2 films grown using triisobutylaluminium and diethylselenium, both ofwhich have lower decomposition temperatures.

AB - A low-pressure metalorganic chemical vapor deposition of CuAlSe2 epitaxial films was performed using several kinds of metalorganic precursors. The film quality varied remarkably depending on the source precursors. Free exciton emission at 2.739 eV was observed in the CuAlSe2 films grown using triisobutylaluminium and diethylselenium, both ofwhich have lower decomposition temperatures.

KW - Chalcopyrite compounds

KW - CuAISe2

KW - Exciton luminescence

KW - LP-MOCVD

KW - Triisobutylaluminium

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

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