Low-pressure metalorganic chemical vapor deposition of cualse2 epitaxial films

Shigefusa Chichibu, Sho Shirakata, Ryo Sudo, Mei Uchida, Yoshiyuki Harada, Satoru Matsumoto, Hirofumi Higuchi, Shigehiro Isomura

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

A low-pressure metalorganic chemical vapor deposition of CuAlSe2 epitaxial films was performed using several kinds of metalorganic precursors. The film quality varied remarkably depending on the source precursors. Free exciton emission at 2.739 eV was observed in the CuAlSe2 films grown using triisobutylaluminium and diethylselenium, both ofwhich have lower decomposition temperatures.

Original languageEnglish
Pages (from-to)139-141
Number of pages3
JournalJapanese Journal of Applied Physics
Volume32
Issue numberS3
DOIs
Publication statusPublished - 1993

Fingerprint

Low pressure chemical vapor deposition
Epitaxial films
Metallorganic chemical vapor deposition
metalorganic chemical vapor deposition
low pressure
Excitons
Decomposition
excitons
decomposition
Temperature
temperature

Keywords

  • Chalcopyrite compounds
  • CuAISe2
  • Exciton luminescence
  • LP-MOCVD
  • Triisobutylaluminium

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Chichibu, S., Shirakata, S., Sudo, R., Uchida, M., Harada, Y., Matsumoto, S., ... Isomura, S. (1993). Low-pressure metalorganic chemical vapor deposition of cualse2 epitaxial films. Japanese Journal of Applied Physics, 32(S3), 139-141. https://doi.org/10.7567/JJAPS.32S3.139

Low-pressure metalorganic chemical vapor deposition of cualse2 epitaxial films. / Chichibu, Shigefusa; Shirakata, Sho; Sudo, Ryo; Uchida, Mei; Harada, Yoshiyuki; Matsumoto, Satoru; Higuchi, Hirofumi; Isomura, Shigehiro.

In: Japanese Journal of Applied Physics, Vol. 32, No. S3, 1993, p. 139-141.

Research output: Contribution to journalArticle

Chichibu, S, Shirakata, S, Sudo, R, Uchida, M, Harada, Y, Matsumoto, S, Higuchi, H & Isomura, S 1993, 'Low-pressure metalorganic chemical vapor deposition of cualse2 epitaxial films', Japanese Journal of Applied Physics, vol. 32, no. S3, pp. 139-141. https://doi.org/10.7567/JJAPS.32S3.139
Chichibu, Shigefusa ; Shirakata, Sho ; Sudo, Ryo ; Uchida, Mei ; Harada, Yoshiyuki ; Matsumoto, Satoru ; Higuchi, Hirofumi ; Isomura, Shigehiro. / Low-pressure metalorganic chemical vapor deposition of cualse2 epitaxial films. In: Japanese Journal of Applied Physics. 1993 ; Vol. 32, No. S3. pp. 139-141.
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