Low-pressure metalorganic chemical vapor deposition of cualse2 epitaxial films

Shigefusa Chichibu, Sho Shirakata, Ryo Sudo, Mei Uchida, Yoshiyuki Harada, Satoru Matsumoto, Hirofumi Higuchi, Shigehiro Isomura

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

A low-pressure metalorganic chemical vapor deposition of CuAlSe2 epitaxial films was performed using several kinds of metalorganic precursors. The film quality varied remarkably depending on the source precursors. Free exciton emission at 2.739 eV was observed in the CuAlSe2 films grown using triisobutylaluminium and diethylselenium, both ofwhich have lower decomposition temperatures.

Original languageEnglish
Pages (from-to)139-141
Number of pages3
JournalJapanese journal of applied physics
Volume32
Issue numberS3
DOIs
Publication statusPublished - 1993 Jan

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Keywords

  • Chalcopyrite compounds
  • CuAISe2
  • Exciton luminescence
  • LP-MOCVD
  • Triisobutylaluminium

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Chichibu, S., Shirakata, S., Sudo, R., Uchida, M., Harada, Y., Matsumoto, S., Higuchi, H., & Isomura, S. (1993). Low-pressure metalorganic chemical vapor deposition of cualse2 epitaxial films. Japanese journal of applied physics, 32(S3), 139-141. https://doi.org/10.7567/JJAPS.32S3.139