Low-pressure nonequilibrium plasma for a top-down nanoprocess

Toshiaki Makabe, Takashi Yagisawa

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The plasma microprocess has developed in cooperation with the miniaturization and high integration of devices in semiconductor manufacturing into a top-down nanoprocess over the last decade. In this paper we present or partly review our series of investigations on a two-frequency capacitively coupled radio frequency plasma (2f-CCP) for etching, sustained by a very-high-frequency source and biased by a low-frequency source in a collisional region. In particular, the velocity distributions of electrons in a bulk plasma, and ions incident on a structured wafer surface are discussed. The plasma surface process, being competitive with etching, deposition, and sometimes charging, has two critical phenomena in etching: plasma molding at a larger structure and microloading at a smaller size. It will be demonstrated that the modeling will be capable of predicting or designing a low-pressure plasma process for etching, after the modeling of the nonequilibrium plasma structure is smoothly coupled with the modeling of the feature profile evolution. Examples of the feature profile evolution of Si, SiO2 and organic low-k material by using a 2f-CCP in each of the feed gases are shown.

Original languageEnglish
Article number024011
JournalPlasma Sources Science and Technology
Volume20
Issue number2
DOIs
Publication statusPublished - 2011 Apr

Fingerprint

nonequilibrium plasmas
low pressure
etching
very high frequencies
miniaturization
plasma etching
profiles
charging
radio frequencies
manufacturing
velocity distribution
wafers
low frequencies
gases
ions
electrons

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Low-pressure nonequilibrium plasma for a top-down nanoprocess. / Makabe, Toshiaki; Yagisawa, Takashi.

In: Plasma Sources Science and Technology, Vol. 20, No. 2, 024011, 04.2011.

Research output: Contribution to journalArticle

Makabe, Toshiaki ; Yagisawa, Takashi. / Low-pressure nonequilibrium plasma for a top-down nanoprocess. In: Plasma Sources Science and Technology. 2011 ; Vol. 20, No. 2.
@article{bc40e74421ae42eda25a438facbf3f31,
title = "Low-pressure nonequilibrium plasma for a top-down nanoprocess",
abstract = "The plasma microprocess has developed in cooperation with the miniaturization and high integration of devices in semiconductor manufacturing into a top-down nanoprocess over the last decade. In this paper we present or partly review our series of investigations on a two-frequency capacitively coupled radio frequency plasma (2f-CCP) for etching, sustained by a very-high-frequency source and biased by a low-frequency source in a collisional region. In particular, the velocity distributions of electrons in a bulk plasma, and ions incident on a structured wafer surface are discussed. The plasma surface process, being competitive with etching, deposition, and sometimes charging, has two critical phenomena in etching: plasma molding at a larger structure and microloading at a smaller size. It will be demonstrated that the modeling will be capable of predicting or designing a low-pressure plasma process for etching, after the modeling of the nonequilibrium plasma structure is smoothly coupled with the modeling of the feature profile evolution. Examples of the feature profile evolution of Si, SiO2 and organic low-k material by using a 2f-CCP in each of the feed gases are shown.",
author = "Toshiaki Makabe and Takashi Yagisawa",
year = "2011",
month = "4",
doi = "10.1088/0963-0252/20/2/024011",
language = "English",
volume = "20",
journal = "Plasma Sources Science and Technology",
issn = "0963-0252",
publisher = "IOP Publishing Ltd.",
number = "2",

}

TY - JOUR

T1 - Low-pressure nonequilibrium plasma for a top-down nanoprocess

AU - Makabe, Toshiaki

AU - Yagisawa, Takashi

PY - 2011/4

Y1 - 2011/4

N2 - The plasma microprocess has developed in cooperation with the miniaturization and high integration of devices in semiconductor manufacturing into a top-down nanoprocess over the last decade. In this paper we present or partly review our series of investigations on a two-frequency capacitively coupled radio frequency plasma (2f-CCP) for etching, sustained by a very-high-frequency source and biased by a low-frequency source in a collisional region. In particular, the velocity distributions of electrons in a bulk plasma, and ions incident on a structured wafer surface are discussed. The plasma surface process, being competitive with etching, deposition, and sometimes charging, has two critical phenomena in etching: plasma molding at a larger structure and microloading at a smaller size. It will be demonstrated that the modeling will be capable of predicting or designing a low-pressure plasma process for etching, after the modeling of the nonequilibrium plasma structure is smoothly coupled with the modeling of the feature profile evolution. Examples of the feature profile evolution of Si, SiO2 and organic low-k material by using a 2f-CCP in each of the feed gases are shown.

AB - The plasma microprocess has developed in cooperation with the miniaturization and high integration of devices in semiconductor manufacturing into a top-down nanoprocess over the last decade. In this paper we present or partly review our series of investigations on a two-frequency capacitively coupled radio frequency plasma (2f-CCP) for etching, sustained by a very-high-frequency source and biased by a low-frequency source in a collisional region. In particular, the velocity distributions of electrons in a bulk plasma, and ions incident on a structured wafer surface are discussed. The plasma surface process, being competitive with etching, deposition, and sometimes charging, has two critical phenomena in etching: plasma molding at a larger structure and microloading at a smaller size. It will be demonstrated that the modeling will be capable of predicting or designing a low-pressure plasma process for etching, after the modeling of the nonequilibrium plasma structure is smoothly coupled with the modeling of the feature profile evolution. Examples of the feature profile evolution of Si, SiO2 and organic low-k material by using a 2f-CCP in each of the feed gases are shown.

UR - http://www.scopus.com/inward/record.url?scp=79953727001&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79953727001&partnerID=8YFLogxK

U2 - 10.1088/0963-0252/20/2/024011

DO - 10.1088/0963-0252/20/2/024011

M3 - Article

VL - 20

JO - Plasma Sources Science and Technology

JF - Plasma Sources Science and Technology

SN - 0963-0252

IS - 2

M1 - 024011

ER -