Low temperature hopping conduction in neutron transmutation doped isotopically enriched70Ge:Ga single crystals

K. M. Itoh; W. L. Hansen; J. W. Beeman; E. E. Haller; J. W. Farmer; V. I. Ozhogin

doi:10.1007/BF00693438

Low temperature hopping conduction in neutron transmutation doped isotopically enriched⁷⁰Ge:Ga single crystals

K. M. Itoh, W. L. Hansen, J. W. Beeman, E. E. Haller, J. W. Farmer, V. I. Ozhogin

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8 Citations (Scopus)

Abstract

The temperature dependence of variable range hopping resistivity ρ in neutron transmutation doped (NTD) isotopically enriched⁷⁰Ge:Ga samples is reported. Five samples with compensation ratios K less than 0.001 and Ga concentrations between 3×10¹⁶ and 1.77×10¹⁷ cm^-3 were studied. All samples investigated show the ln ρ∝T^-1/2 dependence in the temperature range below 1.5K. As thermistor materials NTD⁷⁰Ge:Ga samples are found to have more than factor of two higher sensitivity than commonly used natural NTD Ge in the temperature range between 0.2K and 1K. Our results are compared with theoretical predictions for variable range hopping conduction.

Original language	English
Pages (from-to)	307-312
Number of pages	6
Journal	Journal of Low Temperature Physics
Volume	93
Issue number	3-4
DOIs	https://doi.org/10.1007/BF00693438
Publication status	Published - 1993 Nov 1
Externally published	Yes

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Materials Science(all)
Condensed Matter Physics

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10.1007/BF00693438

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title = "Low temperature hopping conduction in neutron transmutation doped isotopically enriched70Ge:Ga single crystals",

abstract = "The temperature dependence of variable range hopping resistivity ρ in neutron transmutation doped (NTD) isotopically enriched70Ge:Ga samples is reported. Five samples with compensation ratios K less than 0.001 and Ga concentrations between 3×1016 and 1.77×1017 cm-3 were studied. All samples investigated show the ln ρ∝T-1/2 dependence in the temperature range below 1.5K. As thermistor materials NTD70Ge:Ga samples are found to have more than factor of two higher sensitivity than commonly used natural NTD Ge in the temperature range between 0.2K and 1K. Our results are compared with theoretical predictions for variable range hopping conduction.",

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T1 - Low temperature hopping conduction in neutron transmutation doped isotopically enriched70Ge:Ga single crystals

AU - Itoh, K. M.

AU - Hansen, W. L.

AU - Beeman, J. W.

AU - Haller, E. E.

AU - Farmer, J. W.

AU - Ozhogin, V. I.

PY - 1993/11/1

Y1 - 1993/11/1

N2 - The temperature dependence of variable range hopping resistivity ρ in neutron transmutation doped (NTD) isotopically enriched70Ge:Ga samples is reported. Five samples with compensation ratios K less than 0.001 and Ga concentrations between 3×1016 and 1.77×1017 cm-3 were studied. All samples investigated show the ln ρ∝T-1/2 dependence in the temperature range below 1.5K. As thermistor materials NTD70Ge:Ga samples are found to have more than factor of two higher sensitivity than commonly used natural NTD Ge in the temperature range between 0.2K and 1K. Our results are compared with theoretical predictions for variable range hopping conduction.

AB - The temperature dependence of variable range hopping resistivity ρ in neutron transmutation doped (NTD) isotopically enriched70Ge:Ga samples is reported. Five samples with compensation ratios K less than 0.001 and Ga concentrations between 3×1016 and 1.77×1017 cm-3 were studied. All samples investigated show the ln ρ∝T-1/2 dependence in the temperature range below 1.5K. As thermistor materials NTD70Ge:Ga samples are found to have more than factor of two higher sensitivity than commonly used natural NTD Ge in the temperature range between 0.2K and 1K. Our results are compared with theoretical predictions for variable range hopping conduction.

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Low temperature hopping conduction in neutron transmutation doped isotopically enriched⁷⁰Ge:Ga single crystals

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