Low temperature hopping conduction in neutron transmutation doped isotopically enriched70Ge:Ga single crystals

K. M. Itoh, W. L. Hansen, J. W. Beeman, E. E. Haller, J. W. Farmer, V. I. Ozhogin

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Abstract

The temperature dependence of variable range hopping resistivity ρ in neutron transmutation doped (NTD) isotopically enriched70Ge:Ga samples is reported. Five samples with compensation ratios K less than 0.001 and Ga concentrations between 3×1016 and 1.77×1017 cm-3 were studied. All samples investigated show the ln ρ∝T-1/2 dependence in the temperature range below 1.5K. As thermistor materials NTD70Ge:Ga samples are found to have more than factor of two higher sensitivity than commonly used natural NTD Ge in the temperature range between 0.2K and 1K. Our results are compared with theoretical predictions for variable range hopping conduction.

Original languageEnglish
Pages (from-to)307-312
Number of pages6
JournalJournal of Low Temperature Physics
Volume93
Issue number3-4
DOIs
Publication statusPublished - 1993 Nov 1

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ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics

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