Low temperature hopping conduction in neutron transmutation doped isotopically enriched70Ge

Ga single crystals

Kohei M Itoh, W. L. Hansen, J. W. Beeman, E. E. Haller, J. W. Farmer, V. I. Ozhogin

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The temperature dependence of variable range hopping resistivity ρ in neutron transmutation doped (NTD) isotopically enriched70Ge:Ga samples is reported. Five samples with compensation ratios K less than 0.001 and Ga concentrations between 3×1016 and 1.77×1017 cm-3 were studied. All samples investigated show the ln ρ∝T-1/2 dependence in the temperature range below 1.5K. As thermistor materials NTD70Ge:Ga samples are found to have more than factor of two higher sensitivity than commonly used natural NTD Ge in the temperature range between 0.2K and 1K. Our results are compared with theoretical predictions for variable range hopping conduction.

Original languageEnglish
Pages (from-to)307-312
Number of pages6
JournalJournal of Low Temperature Physics
Volume93
Issue number3-4
DOIs
Publication statusPublished - 1993 Nov
Externally publishedYes

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nuclear reactions
Neutrons
Single crystals
conduction
single crystals
Thermistors
Temperature
thermistors
temperature dependence
electrical resistivity
temperature
sensitivity
predictions
Compensation and Redress

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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Low temperature hopping conduction in neutron transmutation doped isotopically enriched70Ge : Ga single crystals. / Itoh, Kohei M; Hansen, W. L.; Beeman, J. W.; Haller, E. E.; Farmer, J. W.; Ozhogin, V. I.

In: Journal of Low Temperature Physics, Vol. 93, No. 3-4, 11.1993, p. 307-312.

Research output: Contribution to journalArticle

Itoh, Kohei M ; Hansen, W. L. ; Beeman, J. W. ; Haller, E. E. ; Farmer, J. W. ; Ozhogin, V. I. / Low temperature hopping conduction in neutron transmutation doped isotopically enriched70Ge : Ga single crystals. In: Journal of Low Temperature Physics. 1993 ; Vol. 93, No. 3-4. pp. 307-312.
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