Low-temperature near-field nonlinear absorption spectroscopy of InGaAs single quantum dots

Takuya Matsumoto; Motoichi Ohtsu; Kazunari Matsuda; Toshiharu Saiki; Hideaki Saito; Kenichi Nishi

doi:10.1063/1.125313

Low-temperature near-field nonlinear absorption spectroscopy of InGaAs single quantum dots

Takuya Matsumoto, Motoichi Ohtsu, Kazunari Matsuda, Toshiharu Saiki, Hideaki Saito, Kenichi Nishi

Research output: Contribution to journal › Article › peer-review

28 Citations (Scopus)

Abstract

Nonlinear absorption spectroscopy of InGaAs single quantum dots (QDs) was realized by means of a low-temperature near-field optical microscope. The spatial distribution of the nonlinear absorption change in single QDs was determined. The dependence of the nonlinear absorption change on the pump power density demonstrates that the nonlinearity originates from the state filling of the ground state. The nonlinear absorption spectrum showed a homogeneous broadening of the ground state of about 5 meV. Furthermore, the change in the absorption cross section of the single QD when the ground state is saturated with carriers is estimated to be 2.8±0.6nm², which agrees with the result predicted on the basis of theoretical consideration.

Original language	English
Pages (from-to)	3246-3248
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	21
DOIs	https://doi.org/10.1063/1.125313
Publication status	Published - 1999 Nov 22
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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AU - Matsumoto, Takuya

AU - Ohtsu, Motoichi

AU - Matsuda, Kazunari

AU - Saiki, Toshiharu

AU - Saito, Hideaki

AU - Nishi, Kenichi

PY - 1999/11/22

Y1 - 1999/11/22

N2 - Nonlinear absorption spectroscopy of InGaAs single quantum dots (QDs) was realized by means of a low-temperature near-field optical microscope. The spatial distribution of the nonlinear absorption change in single QDs was determined. The dependence of the nonlinear absorption change on the pump power density demonstrates that the nonlinearity originates from the state filling of the ground state. The nonlinear absorption spectrum showed a homogeneous broadening of the ground state of about 5 meV. Furthermore, the change in the absorption cross section of the single QD when the ground state is saturated with carriers is estimated to be 2.8±0.6nm2, which agrees with the result predicted on the basis of theoretical consideration.

AB - Nonlinear absorption spectroscopy of InGaAs single quantum dots (QDs) was realized by means of a low-temperature near-field optical microscope. The spatial distribution of the nonlinear absorption change in single QDs was determined. The dependence of the nonlinear absorption change on the pump power density demonstrates that the nonlinearity originates from the state filling of the ground state. The nonlinear absorption spectrum showed a homogeneous broadening of the ground state of about 5 meV. Furthermore, the change in the absorption cross section of the single QD when the ground state is saturated with carriers is estimated to be 2.8±0.6nm2, which agrees with the result predicted on the basis of theoretical consideration.

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Low-temperature near-field nonlinear absorption spectroscopy of InGaAs single quantum dots

Abstract

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