Low-temperature near-field nonlinear absorption spectroscopy of InGaAs single quantum dots

Takuya Matsumoto, Motoichi Ohtsu, Kazunari Matsuda, Toshiharu Saiki, Hideaki Saito, Kenichi Nishi

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Abstract

Nonlinear absorption spectroscopy of InGaAs single quantum dots (QDs) was realized by means of a low-temperature near-field optical microscope. The spatial distribution of the nonlinear absorption change in single QDs was determined. The dependence of the nonlinear absorption change on the pump power density demonstrates that the nonlinearity originates from the state filling of the ground state. The nonlinear absorption spectrum showed a homogeneous broadening of the ground state of about 5 meV. Furthermore, the change in the absorption cross section of the single QD when the ground state is saturated with carriers is estimated to be 2.8±0.6nm2, which agrees with the result predicted on the basis of theoretical consideration.

Original languageEnglish
Pages (from-to)3246-3248
Number of pages3
JournalApplied Physics Letters
Volume75
Issue number21
DOIs
Publication statusPublished - 1999 Nov 22

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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