Low temperature near-field photoluminescence spectroscopy of InGaAs single quantum dots

Toshiharu Saiki, Kenichi Nishi, Motoichi Ohtsu

Research output: Contribution to journalArticle

68 Citations (Scopus)

Abstract

We investigate InGaAs single-dot photoluminescence spectra and images using a low-temperature near-field optical microscope. By modifying the commonly used near-field technique, a high spatial resolution and high detection efficiency are achieved simultaneously. Local collection of the emission signal through a 500 nm (λ/2) aperture contributes to the single-dot imaging with a λ/6 resolution, which is a significant improvement over the conventional spatially resolved spectroscopy. Tailoring the tapered structure of the near-field probe enables us to obtain the emission spectra of single dots in the weak excitation region, where the carrier injection rate is ∼107 excitons/s per dot. By employing such a technique, we examine the evolution of single-dot emission spectra with excitation intensity. In addition to the ground-state emission, excited-state and biexciton emissions are observed for higher excitation intensities. By a precise investigation of the excitation power dependences of individual dots, two-dimensional identification of their emission origins is obtained for the first time.

Original languageEnglish
Pages (from-to)1638-1642
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume37
Issue number3 SUPPL. B
Publication statusPublished - 1998 Mar
Externally publishedYes

Fingerprint

Photoluminescence spectroscopy
Excited states
Excitons
Ground state
Semiconductor quantum dots
near fields
Photoluminescence
Microscopes
quantum dots
Spectroscopy
photoluminescence
Imaging techniques
spectroscopy
excitation
emission spectra
Temperature
carrier injection
optical microscopes
spatial resolution
apertures

Keywords

  • Biexciton
  • Exciton
  • Near-field optical microscope
  • Photoluminescence
  • Quantum dot

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Low temperature near-field photoluminescence spectroscopy of InGaAs single quantum dots. / Saiki, Toshiharu; Nishi, Kenichi; Ohtsu, Motoichi.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 37, No. 3 SUPPL. B, 03.1998, p. 1638-1642.

Research output: Contribution to journalArticle

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