Low temperature photoluminescence from GaAs impinged by mass-separated low-energy C+ ion beams during molecular beam epitaxy

Tsutomu Iida, Yunosuke Makita, Stefan Winter, Shinji Kimura, Yushin Tsai, Yoko Kawasumi, Paul Fons, Akimasa Yamada, Hajime Shibata, Akira Obara, Shigeru Niki, Shin ichiro Uekusa, Takeyo Tsukamoto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

C-doped GaAs films were prepared by novely a developed, combined ion beam and molecular beam method (CIBMBE) as a function of hyperthermal (30-500 eV) energies (EC(+)) of carbon ion (C+) beam. Ion beams of a fixed beam current density were impinged during molecular beam epitaxy growth of GaAs at substrate temperature of 550 °C. Low temperature (2 K) photoluminescence (PL) has been used to characterize the samples together with Hall effects measurements at room temperature. Through the spectral evolution of an emission denoted by [g-g]β which is a specific emission relevant to acceptor-acceptor pairs, the activation rate was confirmed to increase with increasing EC(+) for EC(+) lower than 170 eV. It was explicitly demonstrated that the most effective EC(+) to establish highest activation rate is located at approx.170 eV. This growing activation rate was suggested to be attributed to the enhanced migration of both impinged C and host constituent atoms with increasing EC(+). This surmise was supported also by Hall effect measurements which revealed the maximum net hole concentration (| NA-ND |) for EC(+)=170 eV. For EC(+) higher than approx.170 eV, increasing EC(+) was found to induce the reduction of activation rate. It was suggested that this observation is ascribed not to the formation of C donors but to the enhanced sputtering effect of impinged C+ ions with increasing EC(+).

Original languageEnglish
Title of host publicationMaterials Synthesis and Processing Using Ion Beams
EditorsAnthony F. Garito, Alex K-Y. Jen, Charles Y-C. Lee, Larry R. Dalton
PublisherPubl by Materials Research Society
Pages1029-1034
Number of pages6
ISBN (Print)1558992154
Publication statusPublished - 1994 Jan 1
Externally publishedYes
EventProceedings of the MRS 1993 Fall Meeting - Boston, MA, USA
Duration: 1993 Nov 291993 Dec 3

Publication series

NameMaterials Research Society Symposium Proceedings
Volume316
ISSN (Print)0272-9172

Conference

ConferenceProceedings of the MRS 1993 Fall Meeting
CityBoston, MA, USA
Period93/11/2993/12/3

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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