Low-threshold current-injection single-mode lasing in T-shaped GaAs/AlGaAs quantum wires

Shu Man Liu, Masahiro Yoshita, Makoto Okano, Toshiyuki Ihara, Hirotake Itoh, Hidefumi Akiyama, Loren Pfeiffer, Ken West, Kirk Baldwin

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A one-dimensional active region consisting of 20-period T-shaped GaAs/AlGaAs quantum wires of 14 x 6nm2 combined with a well-defined current-confinement scheme has been utilized to obtain a low-threshold-current high-efficiency laser. A threshold current as low as 0.27 mA, a single-mode cw output power of 0.13 mW at 1 mA injection current, and a differential quantum efficiency of 12% were achieved at 30 K using a quantum-wire laser with a 500-μm-long Fabry-Perot cavity coatedby high-reflectivity thin metals.

Original languageEnglish
Pages (from-to)L330-L332
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume46
Issue number12-16
DOIs
Publication statusPublished - 2007 Apr 13
Externally publishedYes

Keywords

  • Cleaved-edge overgrowth
  • Current injection
  • Low threshold
  • Quantum-wire laser
  • Single mode

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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  • Cite this

    Liu, S. M., Yoshita, M., Okano, M., Ihara, T., Itoh, H., Akiyama, H., Pfeiffer, L., West, K., & Baldwin, K. (2007). Low-threshold current-injection single-mode lasing in T-shaped GaAs/AlGaAs quantum wires. Japanese Journal of Applied Physics, Part 2: Letters, 46(12-16), L330-L332. https://doi.org/10.1143/JJAP.46.L330