Magnetic properties of epitaxially grown Fe3 Si/Ge (111) layers with atomically flat heterointerfaces

Y. Ando; K. Hamaya; K. Kasahara; K. Ueda; Y. Nozaki; T. Sadoh; Y. Maeda; K. Matsuyama; M. Miyao

doi:10.1063/1.3065985

Magnetic properties of epitaxially grown Fe3 Si/Ge (111) layers with atomically flat heterointerfaces

Y. Ando, K. Hamaya, K. Kasahara, K. Ueda, Y. Nozaki, T. Sadoh, Y. Maeda, K. Matsuyama, M. Miyao

Research output: Contribution to journal › Article › peer-review

45 Citations (Scopus)

Abstract

We study magnetic properties of epitaxial Fe3 Si layers grown on Ge(111) with atomically flat interfaces. An unexpected uniaxial magnetic anisotropy is observed in the film plane for all as-grown samples, and the direction of the uniaxial easy axis is different for each of these samples. By postgrowth annealing, surprisingly, the random orientation of the uniaxial easy axis is aligned to a direction along about [0 1- 1], together with a reduction in the saturation magnetization. We discuss a possible mechanism of the variation in the magnetic properties after the annealing.

Original language	English
Article number	07B102
Journal	Journal of Applied Physics
Volume	105
Issue number	7
DOIs	https://doi.org/10.1063/1.3065985
Publication status	Published - 2009
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.1063/1.3065985

Cite this

@article{cf8c4aff6d96415287d77f03ca40e5bb,

title = "Magnetic properties of epitaxially grown Fe3 Si/Ge (111) layers with atomically flat heterointerfaces",

abstract = "We study magnetic properties of epitaxial Fe3 Si layers grown on Ge(111) with atomically flat interfaces. An unexpected uniaxial magnetic anisotropy is observed in the film plane for all as-grown samples, and the direction of the uniaxial easy axis is different for each of these samples. By postgrowth annealing, surprisingly, the random orientation of the uniaxial easy axis is aligned to a direction along about [0 1- 1], together with a reduction in the saturation magnetization. We discuss a possible mechanism of the variation in the magnetic properties after the annealing.",

author = "Y. Ando and K. Hamaya and K. Kasahara and K. Ueda and Y. Nozaki and T. Sadoh and Y. Maeda and K. Matsuyama and M. Miyao",

note = "Funding Information: Y.A. and K.U. acknowledge the support from JSPS Research Program for Young Scientists. This work was partly supported by a Grant-in-Aid for Scientific Research on Priority Area (Grant No. 18063018) from the Ministry of Education, Culture, Sports, Science, and Technology in Japan.",

year = "2009",

doi = "10.1063/1.3065985",

language = "English",

volume = "105",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "7",

}

TY - JOUR

T1 - Magnetic properties of epitaxially grown Fe3 Si/Ge (111) layers with atomically flat heterointerfaces

AU - Ando, Y.

AU - Hamaya, K.

AU - Kasahara, K.

AU - Ueda, K.

AU - Nozaki, Y.

AU - Sadoh, T.

AU - Maeda, Y.

AU - Matsuyama, K.

AU - Miyao, M.

N1 - Funding Information: Y.A. and K.U. acknowledge the support from JSPS Research Program for Young Scientists. This work was partly supported by a Grant-in-Aid for Scientific Research on Priority Area (Grant No. 18063018) from the Ministry of Education, Culture, Sports, Science, and Technology in Japan.

PY - 2009

Y1 - 2009

N2 - We study magnetic properties of epitaxial Fe3 Si layers grown on Ge(111) with atomically flat interfaces. An unexpected uniaxial magnetic anisotropy is observed in the film plane for all as-grown samples, and the direction of the uniaxial easy axis is different for each of these samples. By postgrowth annealing, surprisingly, the random orientation of the uniaxial easy axis is aligned to a direction along about [0 1- 1], together with a reduction in the saturation magnetization. We discuss a possible mechanism of the variation in the magnetic properties after the annealing.

AB - We study magnetic properties of epitaxial Fe3 Si layers grown on Ge(111) with atomically flat interfaces. An unexpected uniaxial magnetic anisotropy is observed in the film plane for all as-grown samples, and the direction of the uniaxial easy axis is different for each of these samples. By postgrowth annealing, surprisingly, the random orientation of the uniaxial easy axis is aligned to a direction along about [0 1- 1], together with a reduction in the saturation magnetization. We discuss a possible mechanism of the variation in the magnetic properties after the annealing.

UR - http://www.scopus.com/inward/record.url?scp=65249183773&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=65249183773&partnerID=8YFLogxK

U2 - 10.1063/1.3065985

DO - 10.1063/1.3065985

M3 - Article

AN - SCOPUS:65249183773

SN - 0021-8979

VL - 105

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 7

M1 - 07B102

ER -

Magnetic properties of epitaxially grown Fe3 Si/Ge (111) layers with atomically flat heterointerfaces

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this