Novel GaAs/InGaAs/GaAs quantum dot (QD) structures in tetrahedral-shaped recesses formed on a (111)B GaAs substrate are fabricated using metalorganic vapor-phase epitaxy. Magneto-photoluminescence (PL) measurement are performed under pulsed high magnetic fields up to 40 T applied parallel and perpendicular to the growth direction of the QD. The diamagnetic shift of the PL originating from QD are observed. The amount of the shift is less than that of the PL from quantum wells for both configurations, indicating strong zero-dimensional quantum confinement.
- Quantum dots
- Tetrahedral-shaped recess
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering