Magneto-photoluminescence study of quantum dots formed on tetrahedral-shaped recesses

Y. Sakuma, Yuji Awano, T. Futatsugi, N. Yokoyama, K. Uchida, N. Miura

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Novel InGaAs quantum dot (QD) structures were fabricated in tetrahedral-shaped recesses (TSRs) formed on a GaAs (111)B substrate using low-pressure metalorganic chemical vapor deposition (MOCVD). The dots were formed in a self-forming manner at the bottom of TSRs due to the compositional nonuniformity of InGaAs grown inside the TSRs. To confirm directly zero-dimensional carrier confinement, magneto-photoluminescence (PL) measurements were performed for several InGaAs TSR-QDs under pulsed high magnetic fields in both Faraday and Voigt configurations. The diamagnetic shifts of QDs were clearly suppressed compared to the corresponding InGaAs quantum wells formed at the TSR sidewalk. The typical deduced Bohr radius from the hydrogen-like exciton model clearly proves a zero-dimensional carrier confinement into the TSR-QD. Moreover, the changes in the strength and anisotropy of the QDs' confinement potential obtained from the magneto-PL results were consistent with the intentional change in the design of the TSR-QDs. Through these studies, we clarified that it is possible to control the carrier confinement potential of TSR-QDs by independently changing the In-content and the thickness of InGaAs during MOCVD growth.

Original languageEnglish
Pages (from-to)1341-1347
Number of pages7
JournalSolid-State Electronics
Volume42
Issue number7-8
Publication statusPublished - 1998 Jul
Externally publishedYes

Fingerprint

recesses
Metallorganic chemical vapor deposition
Semiconductor quantum dots
Photoluminescence
quantum dots
photoluminescence
Low pressure chemical vapor deposition
Excitons
Semiconductor quantum wells
Hydrogen
Anisotropy
Magnetic fields
Substrates
metalorganic chemical vapor deposition
nonuniformity
low pressure
excitons
quantum wells
anisotropy
radii

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Sakuma, Y., Awano, Y., Futatsugi, T., Yokoyama, N., Uchida, K., & Miura, N. (1998). Magneto-photoluminescence study of quantum dots formed on tetrahedral-shaped recesses. Solid-State Electronics, 42(7-8), 1341-1347.

Magneto-photoluminescence study of quantum dots formed on tetrahedral-shaped recesses. / Sakuma, Y.; Awano, Yuji; Futatsugi, T.; Yokoyama, N.; Uchida, K.; Miura, N.

In: Solid-State Electronics, Vol. 42, No. 7-8, 07.1998, p. 1341-1347.

Research output: Contribution to journalArticle

Sakuma, Y, Awano, Y, Futatsugi, T, Yokoyama, N, Uchida, K & Miura, N 1998, 'Magneto-photoluminescence study of quantum dots formed on tetrahedral-shaped recesses', Solid-State Electronics, vol. 42, no. 7-8, pp. 1341-1347.
Sakuma Y, Awano Y, Futatsugi T, Yokoyama N, Uchida K, Miura N. Magneto-photoluminescence study of quantum dots formed on tetrahedral-shaped recesses. Solid-State Electronics. 1998 Jul;42(7-8):1341-1347.
Sakuma, Y. ; Awano, Yuji ; Futatsugi, T. ; Yokoyama, N. ; Uchida, K. ; Miura, N. / Magneto-photoluminescence study of quantum dots formed on tetrahedral-shaped recesses. In: Solid-State Electronics. 1998 ; Vol. 42, No. 7-8. pp. 1341-1347.
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