Magnetocapacitance effect of spin tunneling junctions

Hideo Kaiju, S. Fujita, T. Morozumi, K. Shiiki

Research output: Contribution to journalArticle

39 Citations (Scopus)

Abstract

Magnetocapacitance effect of coercive differential spin tunneling junctions Co(100Å)/Al 2O 3(∼20Å)/Co(500Å) fabricated onto a glass substrate by ion-beam mask sputtering was investigated. The impedance was measured by a four-probe method at room temperature in the frequency range from 120 Hz to 1 MHz. It is found that the effective capacitance changes with the application of an external magnetic field. At high frequencies, the magnetocapacitance ratio is as large as the dc magnetoresistance ratio. However, at low frequencies, capacitance changes cannot be observed because the measurement sensitivity is too low. The magnetocapacitance effect was hence found to be a promising tool for high frequency magnetic sensing.

Original languageEnglish
Pages (from-to)7430-7432
Number of pages3
JournalJournal of Applied Physics
Volume91
Issue number10 I
DOIs
Publication statusPublished - 2002 May 15

Fingerprint

capacitance
masks
sputtering
frequency ranges
ion beams
impedance
low frequencies
glass
room temperature
magnetic fields

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Magnetocapacitance effect of spin tunneling junctions. / Kaiju, Hideo; Fujita, S.; Morozumi, T.; Shiiki, K.

In: Journal of Applied Physics, Vol. 91, No. 10 I, 15.05.2002, p. 7430-7432.

Research output: Contribution to journalArticle

Kaiju, H, Fujita, S, Morozumi, T & Shiiki, K 2002, 'Magnetocapacitance effect of spin tunneling junctions', Journal of Applied Physics, vol. 91, no. 10 I, pp. 7430-7432. https://doi.org/10.1063/1.1451754
Kaiju, Hideo ; Fujita, S. ; Morozumi, T. ; Shiiki, K. / Magnetocapacitance effect of spin tunneling junctions. In: Journal of Applied Physics. 2002 ; Vol. 91, No. 10 I. pp. 7430-7432.
@article{c6dda62c654e4aabb37429f814026b56,
title = "Magnetocapacitance effect of spin tunneling junctions",
abstract = "Magnetocapacitance effect of coercive differential spin tunneling junctions Co(100{\AA})/Al 2O 3(∼20{\AA})/Co(500{\AA}) fabricated onto a glass substrate by ion-beam mask sputtering was investigated. The impedance was measured by a four-probe method at room temperature in the frequency range from 120 Hz to 1 MHz. It is found that the effective capacitance changes with the application of an external magnetic field. At high frequencies, the magnetocapacitance ratio is as large as the dc magnetoresistance ratio. However, at low frequencies, capacitance changes cannot be observed because the measurement sensitivity is too low. The magnetocapacitance effect was hence found to be a promising tool for high frequency magnetic sensing.",
author = "Hideo Kaiju and S. Fujita and T. Morozumi and K. Shiiki",
year = "2002",
month = "5",
day = "15",
doi = "10.1063/1.1451754",
language = "English",
volume = "91",
pages = "7430--7432",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "10 I",

}

TY - JOUR

T1 - Magnetocapacitance effect of spin tunneling junctions

AU - Kaiju, Hideo

AU - Fujita, S.

AU - Morozumi, T.

AU - Shiiki, K.

PY - 2002/5/15

Y1 - 2002/5/15

N2 - Magnetocapacitance effect of coercive differential spin tunneling junctions Co(100Å)/Al 2O 3(∼20Å)/Co(500Å) fabricated onto a glass substrate by ion-beam mask sputtering was investigated. The impedance was measured by a four-probe method at room temperature in the frequency range from 120 Hz to 1 MHz. It is found that the effective capacitance changes with the application of an external magnetic field. At high frequencies, the magnetocapacitance ratio is as large as the dc magnetoresistance ratio. However, at low frequencies, capacitance changes cannot be observed because the measurement sensitivity is too low. The magnetocapacitance effect was hence found to be a promising tool for high frequency magnetic sensing.

AB - Magnetocapacitance effect of coercive differential spin tunneling junctions Co(100Å)/Al 2O 3(∼20Å)/Co(500Å) fabricated onto a glass substrate by ion-beam mask sputtering was investigated. The impedance was measured by a four-probe method at room temperature in the frequency range from 120 Hz to 1 MHz. It is found that the effective capacitance changes with the application of an external magnetic field. At high frequencies, the magnetocapacitance ratio is as large as the dc magnetoresistance ratio. However, at low frequencies, capacitance changes cannot be observed because the measurement sensitivity is too low. The magnetocapacitance effect was hence found to be a promising tool for high frequency magnetic sensing.

UR - http://www.scopus.com/inward/record.url?scp=0037095224&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037095224&partnerID=8YFLogxK

U2 - 10.1063/1.1451754

DO - 10.1063/1.1451754

M3 - Article

AN - SCOPUS:0037095224

VL - 91

SP - 7430

EP - 7432

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 10 I

ER -