Manipulation of magnetization in Pd(100) ultrathin films with quantum well structure using modification of Schottky barrier potentials

Hidetake Tanabe, Shunsuke Sakuragi, Tetsuya Sato

Research output: Contribution to journalArticle

Abstract

The magnetization of Pd(100) ultrathin films that show ferromagnetism due to quantum well states was manipulated by changing the quantum well state with an applied bias voltage. The voltage dependence of the magnetic moment of Pd/SrTiO 3−x /Ti/Au intrinsically depends on the Pd film thickness. The induced change in the magnetic moment is due to the modulation of the phase shift at the interface between the Pd thin film and the semiconductor SrTiO 3−x substrate.

Original languageEnglish
Article number052404
JournalApplied Physics Letters
Volume114
Issue number5
DOIs
Publication statusPublished - 2019 Feb 4

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manipulators
magnetic moments
quantum wells
magnetization
electric potential
ferromagnetism
film thickness
phase shift
modulation
thin films

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Manipulation of magnetization in Pd(100) ultrathin films with quantum well structure using modification of Schottky barrier potentials. / Tanabe, Hidetake; Sakuragi, Shunsuke; Sato, Tetsuya.

In: Applied Physics Letters, Vol. 114, No. 5, 052404, 04.02.2019.

Research output: Contribution to journalArticle

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