Abstract
A new modification of the charge pumping (CP) technique based on the effect of reverse pulse bias on suppression of the geometric component is proposed in order to accurately determine the energetic and lateral distribution of interface state density (Dit) in fully-depleted silicon on insulator metal-oxide-semiconductor field-effect transistors (FD SOI MOSFETs). A comparison of the conventional CP techniques with the proposed method is also presented. It is demonstrated that using the proposed method, the precise estimation of the energetic and lateral distribution of Dit can be simply obtained without interference from the geometry-dependent effect which often leads to the great difficulties in data interpretation in the conventional CP methods.
| Original language | English |
|---|---|
| Pages (from-to) | 2496-2500 |
| Number of pages | 5 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 38 |
| Issue number | 4 B |
| Publication status | Published - 1999 |
| Externally published | Yes |
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Keywords
- Charge pumping
- DC reverse bias
- FD SOI MOSFET
- Geometric component
- Pulse reverse bias
- Rise and fall time method
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Measurement of energetic and lateral distribution of interface state density in fully-depleted silicon on insulator metal-oxide-semiconductor field-effect Transistors. / Duyet, Tran Ngoc; Ishikuro, Hiroki; Shi, Yi; Takamiya, Makoto; Saraya, Takuya; Hiramoto, Toshiro.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 38, No. 4 B, 1999, p. 2496-2500.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Measurement of energetic and lateral distribution of interface state density in fully-depleted silicon on insulator metal-oxide-semiconductor field-effect Transistors
AU - Duyet, Tran Ngoc
AU - Ishikuro, Hiroki
AU - Shi, Yi
AU - Takamiya, Makoto
AU - Saraya, Takuya
AU - Hiramoto, Toshiro
PY - 1999
Y1 - 1999
N2 - A new modification of the charge pumping (CP) technique based on the effect of reverse pulse bias on suppression of the geometric component is proposed in order to accurately determine the energetic and lateral distribution of interface state density (Dit) in fully-depleted silicon on insulator metal-oxide-semiconductor field-effect transistors (FD SOI MOSFETs). A comparison of the conventional CP techniques with the proposed method is also presented. It is demonstrated that using the proposed method, the precise estimation of the energetic and lateral distribution of Dit can be simply obtained without interference from the geometry-dependent effect which often leads to the great difficulties in data interpretation in the conventional CP methods.
AB - A new modification of the charge pumping (CP) technique based on the effect of reverse pulse bias on suppression of the geometric component is proposed in order to accurately determine the energetic and lateral distribution of interface state density (Dit) in fully-depleted silicon on insulator metal-oxide-semiconductor field-effect transistors (FD SOI MOSFETs). A comparison of the conventional CP techniques with the proposed method is also presented. It is demonstrated that using the proposed method, the precise estimation of the energetic and lateral distribution of Dit can be simply obtained without interference from the geometry-dependent effect which often leads to the great difficulties in data interpretation in the conventional CP methods.
KW - Charge pumping
KW - DC reverse bias
KW - FD SOI MOSFET
KW - Geometric component
KW - Pulse reverse bias
KW - Rise and fall time method
UR - http://www.scopus.com/inward/record.url?scp=0006669358&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0006669358&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0006669358
VL - 38
SP - 2496
EP - 2500
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 4 B
ER -