Measurement of energetic and lateral distribution of interface state density in fully-depleted silicon on insulator metal-oxide-semiconductor field-effect Transistors

Tran Ngoc Duyet; Hiroki Ishikuro; Yi Shi; Makoto Takamiya; Takuya Saraya; Toshiro Hiramoto

doi:10.1143/jjap.38.2496

Measurement of energetic and lateral distribution of interface state density in fully-depleted silicon on insulator metal-oxide-semiconductor field-effect Transistors

Tran Ngoc Duyet, Hiroki Ishikuro, Yi Shi, Makoto Takamiya, Takuya Saraya, Toshiro Hiramoto

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

A new modification of the charge pumping (CP) technique based on the effect of reverse pulse bias on suppression of the geometric component is proposed in order to accurately determine the energetic and lateral distribution of interface state density (D_it) in fully-depleted silicon on insulator metal-oxide-semiconductor field-effect transistors (FD SOI MOSFETs). A comparison of the conventional CP techniques with the proposed method is also presented. It is demonstrated that using the proposed method, the precise estimation of the energetic and lateral distribution of D_it can be simply obtained without interference from the geometry-dependent effect which often leads to the great difficulties in data interpretation in the conventional CP methods.

Original language	English
Pages (from-to)	2496-2500
Number of pages	5
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	38
Issue number	4 B
DOIs	https://doi.org/10.1143/jjap.38.2496
Publication status	Published - 1999
Externally published	Yes

Keywords

Charge pumping
DC reverse bias
FD SOI MOSFET
Geometric component
Pulse reverse bias
Rise and fall time method

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/jjap.38.2496

Cite this

Duyet, T. N., Ishikuro, H., Shi, Y., Takamiya, M., Saraya, T., & Hiramoto, T. (1999). Measurement of energetic and lateral distribution of interface state density in fully-depleted silicon on insulator metal-oxide-semiconductor field-effect Transistors. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 38(4 B), 2496-2500. https://doi.org/10.1143/jjap.38.2496

Measurement of energetic and lateral distribution of interface state density in fully-depleted silicon on insulator metal-oxide-semiconductor field-effect Transistors. / Duyet, Tran Ngoc; Ishikuro, Hiroki; Shi, Yi et al.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 38, No. 4 B, 1999, p. 2496-2500.

Research output: Contribution to journal › Article › peer-review

Duyet, TN, Ishikuro, H, Shi, Y, Takamiya, M, Saraya, T & Hiramoto, T 1999, 'Measurement of energetic and lateral distribution of interface state density in fully-depleted silicon on insulator metal-oxide-semiconductor field-effect Transistors', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 38, no. 4 B, pp. 2496-2500. https://doi.org/10.1143/jjap.38.2496

Duyet TN, Ishikuro H, Shi Y, Takamiya M, Saraya T, Hiramoto T. Measurement of energetic and lateral distribution of interface state density in fully-depleted silicon on insulator metal-oxide-semiconductor field-effect Transistors. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 1999;38(4 B):2496-2500. doi: 10.1143/jjap.38.2496

@article{aa870748b552484d9d0a11d696b05ceb,

title = "Measurement of energetic and lateral distribution of interface state density in fully-depleted silicon on insulator metal-oxide-semiconductor field-effect Transistors",

abstract = "A new modification of the charge pumping (CP) technique based on the effect of reverse pulse bias on suppression of the geometric component is proposed in order to accurately determine the energetic and lateral distribution of interface state density (Dit) in fully-depleted silicon on insulator metal-oxide-semiconductor field-effect transistors (FD SOI MOSFETs). A comparison of the conventional CP techniques with the proposed method is also presented. It is demonstrated that using the proposed method, the precise estimation of the energetic and lateral distribution of Dit can be simply obtained without interference from the geometry-dependent effect which often leads to the great difficulties in data interpretation in the conventional CP methods.",

keywords = "Charge pumping, DC reverse bias, FD SOI MOSFET, Geometric component, Pulse reverse bias, Rise and fall time method",

author = "Duyet, {Tran Ngoc} and Hiroki Ishikuro and Yi Shi and Makoto Takamiya and Takuya Saraya and Toshiro Hiramoto",

year = "1999",

doi = "10.1143/jjap.38.2496",

language = "English",

volume = "38",

pages = "2496--2500",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "4 B",

}

TY - JOUR

T1 - Measurement of energetic and lateral distribution of interface state density in fully-depleted silicon on insulator metal-oxide-semiconductor field-effect Transistors

AU - Duyet, Tran Ngoc

AU - Ishikuro, Hiroki

AU - Shi, Yi

AU - Takamiya, Makoto

AU - Saraya, Takuya

AU - Hiramoto, Toshiro

PY - 1999

Y1 - 1999

N2 - A new modification of the charge pumping (CP) technique based on the effect of reverse pulse bias on suppression of the geometric component is proposed in order to accurately determine the energetic and lateral distribution of interface state density (Dit) in fully-depleted silicon on insulator metal-oxide-semiconductor field-effect transistors (FD SOI MOSFETs). A comparison of the conventional CP techniques with the proposed method is also presented. It is demonstrated that using the proposed method, the precise estimation of the energetic and lateral distribution of Dit can be simply obtained without interference from the geometry-dependent effect which often leads to the great difficulties in data interpretation in the conventional CP methods.

AB - A new modification of the charge pumping (CP) technique based on the effect of reverse pulse bias on suppression of the geometric component is proposed in order to accurately determine the energetic and lateral distribution of interface state density (Dit) in fully-depleted silicon on insulator metal-oxide-semiconductor field-effect transistors (FD SOI MOSFETs). A comparison of the conventional CP techniques with the proposed method is also presented. It is demonstrated that using the proposed method, the precise estimation of the energetic and lateral distribution of Dit can be simply obtained without interference from the geometry-dependent effect which often leads to the great difficulties in data interpretation in the conventional CP methods.

KW - Charge pumping

KW - DC reverse bias

KW - FD SOI MOSFET

KW - Geometric component

KW - Pulse reverse bias

KW - Rise and fall time method

UR - http://www.scopus.com/inward/record.url?scp=0006669358&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0006669358&partnerID=8YFLogxK

U2 - 10.1143/jjap.38.2496

DO - 10.1143/jjap.38.2496

M3 - Article

AN - SCOPUS:0006669358

VL - 38

SP - 2496

EP - 2500

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 4 B

ER -

Measurement of energetic and lateral distribution of interface state density in fully-depleted silicon on insulator metal-oxide-semiconductor field-effect Transistors

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Keywords

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