Measurement of energetic and lateral distribution of interface state density in fully-depleted silicon on insulator metal-oxide-semiconductor field-effect Transistors

Tran Ngoc Duyet, Hiroki Ishikuro, Yi Shi, Makoto Takamiya, Takuya Saraya, Toshiro Hiramoto

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

A new modification of the charge pumping (CP) technique based on the effect of reverse pulse bias on suppression of the geometric component is proposed in order to accurately determine the energetic and lateral distribution of interface state density (Dit) in fully-depleted silicon on insulator metal-oxide-semiconductor field-effect transistors (FD SOI MOSFETs). A comparison of the conventional CP techniques with the proposed method is also presented. It is demonstrated that using the proposed method, the precise estimation of the energetic and lateral distribution of Dit can be simply obtained without interference from the geometry-dependent effect which often leads to the great difficulties in data interpretation in the conventional CP methods.

Original languageEnglish
Pages (from-to)2496-2500
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume38
Issue number4 B
Publication statusPublished - 1999
Externally publishedYes

Fingerprint

Interface states
MOSFET devices
metal oxide semiconductors
pumping
field effect transistors
insulators
Silicon
Geometry
silicon
retarding
interference
geometry
pulses

Keywords

  • Charge pumping
  • DC reverse bias
  • FD SOI MOSFET
  • Geometric component
  • Pulse reverse bias
  • Rise and fall time method

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

@article{aa870748b552484d9d0a11d696b05ceb,
title = "Measurement of energetic and lateral distribution of interface state density in fully-depleted silicon on insulator metal-oxide-semiconductor field-effect Transistors",
abstract = "A new modification of the charge pumping (CP) technique based on the effect of reverse pulse bias on suppression of the geometric component is proposed in order to accurately determine the energetic and lateral distribution of interface state density (Dit) in fully-depleted silicon on insulator metal-oxide-semiconductor field-effect transistors (FD SOI MOSFETs). A comparison of the conventional CP techniques with the proposed method is also presented. It is demonstrated that using the proposed method, the precise estimation of the energetic and lateral distribution of Dit can be simply obtained without interference from the geometry-dependent effect which often leads to the great difficulties in data interpretation in the conventional CP methods.",
keywords = "Charge pumping, DC reverse bias, FD SOI MOSFET, Geometric component, Pulse reverse bias, Rise and fall time method",
author = "Duyet, {Tran Ngoc} and Hiroki Ishikuro and Yi Shi and Makoto Takamiya and Takuya Saraya and Toshiro Hiramoto",
year = "1999",
language = "English",
volume = "38",
pages = "2496--2500",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "4 B",

}

TY - JOUR

T1 - Measurement of energetic and lateral distribution of interface state density in fully-depleted silicon on insulator metal-oxide-semiconductor field-effect Transistors

AU - Duyet, Tran Ngoc

AU - Ishikuro, Hiroki

AU - Shi, Yi

AU - Takamiya, Makoto

AU - Saraya, Takuya

AU - Hiramoto, Toshiro

PY - 1999

Y1 - 1999

N2 - A new modification of the charge pumping (CP) technique based on the effect of reverse pulse bias on suppression of the geometric component is proposed in order to accurately determine the energetic and lateral distribution of interface state density (Dit) in fully-depleted silicon on insulator metal-oxide-semiconductor field-effect transistors (FD SOI MOSFETs). A comparison of the conventional CP techniques with the proposed method is also presented. It is demonstrated that using the proposed method, the precise estimation of the energetic and lateral distribution of Dit can be simply obtained without interference from the geometry-dependent effect which often leads to the great difficulties in data interpretation in the conventional CP methods.

AB - A new modification of the charge pumping (CP) technique based on the effect of reverse pulse bias on suppression of the geometric component is proposed in order to accurately determine the energetic and lateral distribution of interface state density (Dit) in fully-depleted silicon on insulator metal-oxide-semiconductor field-effect transistors (FD SOI MOSFETs). A comparison of the conventional CP techniques with the proposed method is also presented. It is demonstrated that using the proposed method, the precise estimation of the energetic and lateral distribution of Dit can be simply obtained without interference from the geometry-dependent effect which often leads to the great difficulties in data interpretation in the conventional CP methods.

KW - Charge pumping

KW - DC reverse bias

KW - FD SOI MOSFET

KW - Geometric component

KW - Pulse reverse bias

KW - Rise and fall time method

UR - http://www.scopus.com/inward/record.url?scp=0006669358&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0006669358&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0006669358

VL - 38

SP - 2496

EP - 2500

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 4 B

ER -