Measurement of energetic and lateral distribution of interface state density in fully-depleted silicon on insulator metal-oxide-semiconductor field-effect Transistors

Tran Ngoc Duyet, Hiroki Ishikuro, Yi Shi, Makoto Takamiya, Takuya Saraya, Toshiro Hiramoto

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

A new modification of the charge pumping (CP) technique based on the effect of reverse pulse bias on suppression of the geometric component is proposed in order to accurately determine the energetic and lateral distribution of interface state density (Dit) in fully-depleted silicon on insulator metal-oxide-semiconductor field-effect transistors (FD SOI MOSFETs). A comparison of the conventional CP techniques with the proposed method is also presented. It is demonstrated that using the proposed method, the precise estimation of the energetic and lateral distribution of Dit can be simply obtained without interference from the geometry-dependent effect which often leads to the great difficulties in data interpretation in the conventional CP methods.

Original languageEnglish
Pages (from-to)2496-2500
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume38
Issue number4 B
DOIs
Publication statusPublished - 1999 Jan 1
Externally publishedYes

Keywords

  • Charge pumping
  • DC reverse bias
  • FD SOI MOSFET
  • Geometric component
  • Pulse reverse bias
  • Rise and fall time method

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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