Mechanisms of material removal and subsurface damage in fixed-abrasive diamond wire slicing of single-crystalline silicon

Takaaki Suzuki, Yuki Nishino, Jiwang Yan

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

Single-crystal silicon was sliced using a newly developed high-speed fixed-abrasive dicing wire saw. The effects of diamond grit size, wire speed, and number of slicing cycle on the surface roughness and subsurface damage of the workpiece were investigated by surface profiling, Raman spectroscopy and cross-sectional transmission electron microscopy. It was found that by using finer diamond grits and increasing the sawing cycles, the depth of micro dents and saw marks was reduced significantly, and in turn, the surface roughness was improved. A transition from brittle mode to ductile mode machining was confirmed from chip morphology observation when reducing the grit size. The subsurface damaged layers were composed of amorphous layers, dislocated layers with grain boundaries, as well as micro cracks. The smooth surface regions were dominated by amorphous silicon; while within the saw marks, a mixture of amorphous and metastable silicon phases was detected. Inside the micro dents, however, single-crystal silicon was predominant. Furthermore, the significance of silicon amorphization and poly-crystallization was strongly dependent on the wire speed. The higher the wire speed, the less the amorphous and polycrystalline layer. The present study provides comprehensive insights into the surface formation mechanism which is important for process optimization of high-speed and low-damage slicing of single-crystal silicon.

Original languageEnglish
JournalPrecision Engineering
DOIs
Publication statusAccepted/In press - 2017 Apr 10

Fingerprint

Abrasives
Diamonds
Wire
Crystalline materials
Silicon
Single crystals
Surface roughness
Sawing
Amorphization
Amorphous silicon
Raman spectroscopy
Machining
Grain boundaries
Crystallization
Transmission electron microscopy
Cracks

Keywords

  • Diamond wire
  • Dicing wire saw
  • Ductile mode machining
  • Fixed abrasive
  • Precision slicing
  • Single-crystal silicon
  • Subsurface damage
  • Surface integrity

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Mechanisms of material removal and subsurface damage in fixed-abrasive diamond wire slicing of single-crystalline silicon. / Suzuki, Takaaki; Nishino, Yuki; Yan, Jiwang.

In: Precision Engineering, 10.04.2017.

Research output: Contribution to journalArticle

@article{addb41ad3c1f4a44a58764c8ffb2f3f2,
title = "Mechanisms of material removal and subsurface damage in fixed-abrasive diamond wire slicing of single-crystalline silicon",
abstract = "Single-crystal silicon was sliced using a newly developed high-speed fixed-abrasive dicing wire saw. The effects of diamond grit size, wire speed, and number of slicing cycle on the surface roughness and subsurface damage of the workpiece were investigated by surface profiling, Raman spectroscopy and cross-sectional transmission electron microscopy. It was found that by using finer diamond grits and increasing the sawing cycles, the depth of micro dents and saw marks was reduced significantly, and in turn, the surface roughness was improved. A transition from brittle mode to ductile mode machining was confirmed from chip morphology observation when reducing the grit size. The subsurface damaged layers were composed of amorphous layers, dislocated layers with grain boundaries, as well as micro cracks. The smooth surface regions were dominated by amorphous silicon; while within the saw marks, a mixture of amorphous and metastable silicon phases was detected. Inside the micro dents, however, single-crystal silicon was predominant. Furthermore, the significance of silicon amorphization and poly-crystallization was strongly dependent on the wire speed. The higher the wire speed, the less the amorphous and polycrystalline layer. The present study provides comprehensive insights into the surface formation mechanism which is important for process optimization of high-speed and low-damage slicing of single-crystal silicon.",
keywords = "Diamond wire, Dicing wire saw, Ductile mode machining, Fixed abrasive, Precision slicing, Single-crystal silicon, Subsurface damage, Surface integrity",
author = "Takaaki Suzuki and Yuki Nishino and Jiwang Yan",
year = "2017",
month = "4",
day = "10",
doi = "10.1016/j.precisioneng.2017.04.011",
language = "English",
journal = "Precision Engineering",
issn = "0141-6359",
publisher = "Elsevier Inc.",

}

TY - JOUR

T1 - Mechanisms of material removal and subsurface damage in fixed-abrasive diamond wire slicing of single-crystalline silicon

AU - Suzuki, Takaaki

AU - Nishino, Yuki

AU - Yan, Jiwang

PY - 2017/4/10

Y1 - 2017/4/10

N2 - Single-crystal silicon was sliced using a newly developed high-speed fixed-abrasive dicing wire saw. The effects of diamond grit size, wire speed, and number of slicing cycle on the surface roughness and subsurface damage of the workpiece were investigated by surface profiling, Raman spectroscopy and cross-sectional transmission electron microscopy. It was found that by using finer diamond grits and increasing the sawing cycles, the depth of micro dents and saw marks was reduced significantly, and in turn, the surface roughness was improved. A transition from brittle mode to ductile mode machining was confirmed from chip morphology observation when reducing the grit size. The subsurface damaged layers were composed of amorphous layers, dislocated layers with grain boundaries, as well as micro cracks. The smooth surface regions were dominated by amorphous silicon; while within the saw marks, a mixture of amorphous and metastable silicon phases was detected. Inside the micro dents, however, single-crystal silicon was predominant. Furthermore, the significance of silicon amorphization and poly-crystallization was strongly dependent on the wire speed. The higher the wire speed, the less the amorphous and polycrystalline layer. The present study provides comprehensive insights into the surface formation mechanism which is important for process optimization of high-speed and low-damage slicing of single-crystal silicon.

AB - Single-crystal silicon was sliced using a newly developed high-speed fixed-abrasive dicing wire saw. The effects of diamond grit size, wire speed, and number of slicing cycle on the surface roughness and subsurface damage of the workpiece were investigated by surface profiling, Raman spectroscopy and cross-sectional transmission electron microscopy. It was found that by using finer diamond grits and increasing the sawing cycles, the depth of micro dents and saw marks was reduced significantly, and in turn, the surface roughness was improved. A transition from brittle mode to ductile mode machining was confirmed from chip morphology observation when reducing the grit size. The subsurface damaged layers were composed of amorphous layers, dislocated layers with grain boundaries, as well as micro cracks. The smooth surface regions were dominated by amorphous silicon; while within the saw marks, a mixture of amorphous and metastable silicon phases was detected. Inside the micro dents, however, single-crystal silicon was predominant. Furthermore, the significance of silicon amorphization and poly-crystallization was strongly dependent on the wire speed. The higher the wire speed, the less the amorphous and polycrystalline layer. The present study provides comprehensive insights into the surface formation mechanism which is important for process optimization of high-speed and low-damage slicing of single-crystal silicon.

KW - Diamond wire

KW - Dicing wire saw

KW - Ductile mode machining

KW - Fixed abrasive

KW - Precision slicing

KW - Single-crystal silicon

KW - Subsurface damage

KW - Surface integrity

UR - http://www.scopus.com/inward/record.url?scp=85018328084&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85018328084&partnerID=8YFLogxK

U2 - 10.1016/j.precisioneng.2017.04.011

DO - 10.1016/j.precisioneng.2017.04.011

M3 - Article

AN - SCOPUS:85018328084

JO - Precision Engineering

JF - Precision Engineering

SN - 0141-6359

ER -