Mechanisms of quantum dot energy engineering by metalorganic vapor phase epitaxy on patterned nonplanar substrates

E. Pelucchi, Shinichi Watanabe, K. Leifer, Q. Zhu, B. Dwir, P. De Los Rios, E. Kapon

Research output: Contribution to journalArticle

48 Citations (Scopus)

Abstract

A novel technique for tuning the strength of quantum confinement in site-controlled semiconductor quantum dots (QDs) is introduced and investigated theoretically and experimentally. The method makes use of controlled local growth rates during metalorganic vapor phase epitaxy on patterned arrays of inverted pyramids. A model accounting for precursor migration and adatom incorporation predicts the tuning in QD thickness as a function of the pattern parameters. The results are in good agreement with experimental findings. This technique offers means for designing QD photonic structures with potential applications in QD-based cavity quantum electrodynamics and quantum information processing.

Original languageEnglish
Pages (from-to)1282-1285
Number of pages4
JournalNano Letters
Volume7
Issue number5
DOIs
Publication statusPublished - 2007 May
Externally publishedYes

    Fingerprint

ASJC Scopus subject areas

  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Chemistry (miscellaneous)

Cite this