Mechanochemical oxidation of silicon and selectivity of oxide superficial layer dissolution in aqueous solutions of HF and KOH

N. Števulová, Tetsuya Suzuki, M. Senna, M. Bálintová, V. Šepelák, K. Tkáčová

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Mechanochemical oxidation of silicon and selectivity of oxide layer dissolution in diluted solutions of HF and KOH were investigated. Energy-intensive grinding of Si is accompanied by changes in state and composition of superficial layers and by significant decrease in crystallinity. The effect of the polarity of liquid grinding environment on the amorphisation is not significant. The permittivity of liquid influences oxidation of silicon and surface concentration of damage centers. The porous oxide shell covering the ground particles controls the adsorption behaviour of Si and consequently its dissolution in diluted solutions of HF and KOH. Stimulating or inhibiting effect of mechanically induced pre-oxidation depends upon the mechanism of dissolution. While selective dissolution of oxide in HF is facilitated by the pre-oxidation, the direct dissolution of silicon in alkaline solvents is inhibited by oxide surface layer.

Original languageEnglish
Pages (from-to)681-686
Number of pages6
JournalSolid State Ionics
Volume101-103
Issue numberPART 1
Publication statusPublished - 1997 Nov

Fingerprint

Silicon
Oxides
dissolving
Dissolution
selectivity
aqueous solutions
Oxidation
oxidation
oxides
silicon
grinding
Amorphization
Liquids
liquids
crystallinity
surface layers
polarity
coverings
Permittivity
permittivity

Keywords

  • Dissolution
  • Mechanochemical oxidation
  • Silicon

ASJC Scopus subject areas

  • Electrochemistry
  • Physical and Theoretical Chemistry
  • Energy Engineering and Power Technology
  • Materials Chemistry
  • Condensed Matter Physics

Cite this

Števulová, N., Suzuki, T., Senna, M., Bálintová, M., Šepelák, V., & Tkáčová, K. (1997). Mechanochemical oxidation of silicon and selectivity of oxide superficial layer dissolution in aqueous solutions of HF and KOH. Solid State Ionics, 101-103(PART 1), 681-686.

Mechanochemical oxidation of silicon and selectivity of oxide superficial layer dissolution in aqueous solutions of HF and KOH. / Števulová, N.; Suzuki, Tetsuya; Senna, M.; Bálintová, M.; Šepelák, V.; Tkáčová, K.

In: Solid State Ionics, Vol. 101-103, No. PART 1, 11.1997, p. 681-686.

Research output: Contribution to journalArticle

Števulová, N, Suzuki, T, Senna, M, Bálintová, M, Šepelák, V & Tkáčová, K 1997, 'Mechanochemical oxidation of silicon and selectivity of oxide superficial layer dissolution in aqueous solutions of HF and KOH', Solid State Ionics, vol. 101-103, no. PART 1, pp. 681-686.
Števulová N, Suzuki T, Senna M, Bálintová M, Šepelák V, Tkáčová K. Mechanochemical oxidation of silicon and selectivity of oxide superficial layer dissolution in aqueous solutions of HF and KOH. Solid State Ionics. 1997 Nov;101-103(PART 1):681-686.
Števulová, N. ; Suzuki, Tetsuya ; Senna, M. ; Bálintová, M. ; Šepelák, V. ; Tkáčová, K. / Mechanochemical oxidation of silicon and selectivity of oxide superficial layer dissolution in aqueous solutions of HF and KOH. In: Solid State Ionics. 1997 ; Vol. 101-103, No. PART 1. pp. 681-686.
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