Memory function approach to in-plane anisotropic resistivity in the antiferromagnetic phase of iron arsenide superconductors

Koudai Sugimoto, Peter Prelovšek, Eiji Kaneshita, Takami Tohyama

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We theoretically examine anisotropy of in-plane resistivity in the striped antiferromagnetic phase of an iron arsenide superconductor by applying a memory function approach to the ordered phase with isotropic nonmagnetic impurity. We find that the anisotropy of the scattering rate is independent of carrier density when the topology of the Fermi surface is changed after the introduction of holes. On the other hand, the anisotropy of the Drude weight monotonically decreases reflecting the distortion of the Dirac Fermi surface and eventually leads to the reverse of anisotropy of resistivity, being consistent with experiment. The origin of the anisotropy is thus attributed to the interplay of impurity scattering and anisotropic electronic states.

Original languageEnglish
Article number125157
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume90
Issue number12
DOIs
Publication statusPublished - 2014 Sep 30
Externally publishedYes

Fingerprint

Superconducting materials
Anisotropy
Iron
Data storage equipment
iron
anisotropy
electrical resistivity
Fermi surface
Fermi surfaces
Scattering
Impurities
impurities
Electronic states
scattering
Carrier concentration
topology
Topology
electronics
Experiments

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Memory function approach to in-plane anisotropic resistivity in the antiferromagnetic phase of iron arsenide superconductors. / Sugimoto, Koudai; Prelovšek, Peter; Kaneshita, Eiji; Tohyama, Takami.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 90, No. 12, 125157, 30.09.2014.

Research output: Contribution to journalArticle

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