Metal-insulator transition of NTD 70Ge: Ga in magnetic fields

Michio Watanabe; Kohei M. Itoh; Youiti Ootuka; Eugene E. Haller

doi:10.1016/S0921-4526(99)02879-3

Metal-insulator transition of NTD ⁷⁰Ge: Ga in magnetic fields

Michio Watanabe, Kohei M. Itoh, Youiti Ootuka, Eugene E. Haller

Department of Applied Physics and Physico-Informatics

Research output: Contribution to journal › Article

Abstract

We have determined the temperature dependence of the electrical conductivity σ(N, B, T) of nominally uncompensated, neutron-transmutation-doped (NTD)⁷⁰Ge:Ga samples in magnetic fields up to B = 8 T at low temperatures (T = 0.05-0.5 K) to investigate both the doping-induced metal-insulator transition (MIT), σ(N,B,0) ∞ (N - N_c)μ, and the magnetic-field-induced MIT, σ(N, B, 0) ∞ (B_c - B)^μ + ′. Our experimental results show that μ = μ′ = 1.1 ± 0.1 in sufficiently large magnetic fields.

Original language	English
Pages (from-to)	1677-1678
Number of pages	2
Journal	Physica B: Condensed Matter
Volume	284-288
Issue number	PART II
DOIs	https://doi.org/10.1016/S0921-4526(99)02879-3
Publication status	Published - 2000 Jan 1

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Keywords

Critical exponent
Metal-insulator transition
Neutron-transmutation doping
Semiconductor

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Cite this

Watanabe, M., Itoh, K. M., Ootuka, Y., & Haller, E. E. (2000). Metal-insulator transition of NTD ⁷⁰Ge: Ga in magnetic fields. Physica B: Condensed Matter, 284-288(PART II), 1677-1678. https://doi.org/10.1016/S0921-4526(99)02879-3

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abstract = "We have determined the temperature dependence of the electrical conductivity σ(N, B, T) of nominally uncompensated, neutron-transmutation-doped (NTD)70Ge:Ga samples in magnetic fields up to B = 8 T at low temperatures (T = 0.05-0.5 K) to investigate both the doping-induced metal-insulator transition (MIT), σ(N,B,0) ∞ (N - Nc)μ, and the magnetic-field-induced MIT, σ(N, B, 0) ∞ (Bc - B)μ + ′. Our experimental results show that μ = μ′ = 1.1 ± 0.1 in sufficiently large magnetic fields.",

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AB - We have determined the temperature dependence of the electrical conductivity σ(N, B, T) of nominally uncompensated, neutron-transmutation-doped (NTD)70Ge:Ga samples in magnetic fields up to B = 8 T at low temperatures (T = 0.05-0.5 K) to investigate both the doping-induced metal-insulator transition (MIT), σ(N,B,0) ∞ (N - Nc)μ, and the magnetic-field-induced MIT, σ(N, B, 0) ∞ (Bc - B)μ + ′. Our experimental results show that μ = μ′ = 1.1 ± 0.1 in sufficiently large magnetic fields.

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10.1016/S0921-4526(99)02879-3