Metal-insulator transition of NTD 70Ge: Ga in magnetic fields

Michio Watanabe, Kohei M. Itoh, Youiti Ootuka, Eugene E. Haller

Research output: Contribution to journalArticle

Abstract

We have determined the temperature dependence of the electrical conductivity σ(N, B, T) of nominally uncompensated, neutron-transmutation-doped (NTD)70Ge:Ga samples in magnetic fields up to B = 8 T at low temperatures (T = 0.05-0.5 K) to investigate both the doping-induced metal-insulator transition (MIT), σ(N,B,0) ∞ (N - Nc)μ, and the magnetic-field-induced MIT, σ(N, B, 0) ∞ (Bc - B)μ + ′. Our experimental results show that μ = μ′ = 1.1 ± 0.1 in sufficiently large magnetic fields.

Original languageEnglish
Pages (from-to)1677-1678
Number of pages2
JournalPhysica B: Condensed Matter
Volume284-288
Issue numberPART II
DOIs
Publication statusPublished - 2000 Jan 1

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Keywords

  • Critical exponent
  • Metal-insulator transition
  • Neutron-transmutation doping
  • Semiconductor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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