Metal-insulator transition of NTD 70Ge: Ga in magnetic fields

Michio Watanabe; Kohei M. Itoh; Youiti Ootuka; Eugene E. Haller

doi:10.1016/S0921-4526(99)02879-3

Metal-insulator transition of NTD ⁷⁰Ge: Ga in magnetic fields

Michio Watanabe, Kohei M. Itoh, Youiti Ootuka, Eugene E. Haller

Department of Applied Physics and Physico-Informatics

Research output: Contribution to journal › Article › peer-review

Abstract

We have determined the temperature dependence of the electrical conductivity σ(N, B, T) of nominally uncompensated, neutron-transmutation-doped (NTD)⁷⁰Ge:Ga samples in magnetic fields up to B = 8 T at low temperatures (T = 0.05-0.5 K) to investigate both the doping-induced metal-insulator transition (MIT), σ(N,B,0) ∞ (N - N_c)μ, and the magnetic-field-induced MIT, σ(N, B, 0) ∞ (B_c - B)^μ + ′. Our experimental results show that μ = μ′ = 1.1 ± 0.1 in sufficiently large magnetic fields.

Original language	English
Pages (from-to)	1677-1678
Number of pages	2
Journal	Physica B: Condensed Matter
Volume	284-288
Issue number	PART II
DOIs	https://doi.org/10.1016/S0921-4526(99)02879-3
Publication status	Published - 2000

Keywords

Critical exponent
Metal-insulator transition
Neutron-transmutation doping
Semiconductor

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1016/S0921-4526(99)02879-3

Cite this

@article{1b18629f32214798804e7a8193204e50,

title = "Metal-insulator transition of NTD 70Ge: Ga in magnetic fields",

abstract = "We have determined the temperature dependence of the electrical conductivity σ(N, B, T) of nominally uncompensated, neutron-transmutation-doped (NTD)70Ge:Ga samples in magnetic fields up to B = 8 T at low temperatures (T = 0.05-0.5 K) to investigate both the doping-induced metal-insulator transition (MIT), σ(N,B,0) ∞ (N - Nc)μ, and the magnetic-field-induced MIT, σ(N, B, 0) ∞ (Bc - B)μ + ′. Our experimental results show that μ = μ′ = 1.1 ± 0.1 in sufficiently large magnetic fields.",

keywords = "Critical exponent, Metal-insulator transition, Neutron-transmutation doping, Semiconductor",

author = "Michio Watanabe and Itoh, {Kohei M.} and Youiti Ootuka and Haller, {Eugene E.}",

note = "Funding Information: All the low-temperature measurements were carried out at the Cryogenic Center, The University of Tokyo, Japan. The work at Keio was supported in part by a Grant-in-Aid for Scientific Research from the Ministry of Education, Science, Sports, and Culture, Japan. The work at Berkeley was supported in part by the Director, Office of Energy Research, Office of Basic Energy Science, Materials Sciences Division of the US Department of Energy under Contract no. DE-AC03-76SF00098 and in part by US NSF Grant no. DMR-97 32707.",

year = "2000",

doi = "10.1016/S0921-4526(99)02879-3",

language = "English",

volume = "284-288",

pages = "1677--1678",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier",

number = "PART II",

}

TY - JOUR

T1 - Metal-insulator transition of NTD 70Ge

T2 - Ga in magnetic fields

AU - Watanabe, Michio

AU - Itoh, Kohei M.

AU - Ootuka, Youiti

AU - Haller, Eugene E.

N1 - Funding Information: All the low-temperature measurements were carried out at the Cryogenic Center, The University of Tokyo, Japan. The work at Keio was supported in part by a Grant-in-Aid for Scientific Research from the Ministry of Education, Science, Sports, and Culture, Japan. The work at Berkeley was supported in part by the Director, Office of Energy Research, Office of Basic Energy Science, Materials Sciences Division of the US Department of Energy under Contract no. DE-AC03-76SF00098 and in part by US NSF Grant no. DMR-97 32707.

PY - 2000

Y1 - 2000

N2 - We have determined the temperature dependence of the electrical conductivity σ(N, B, T) of nominally uncompensated, neutron-transmutation-doped (NTD)70Ge:Ga samples in magnetic fields up to B = 8 T at low temperatures (T = 0.05-0.5 K) to investigate both the doping-induced metal-insulator transition (MIT), σ(N,B,0) ∞ (N - Nc)μ, and the magnetic-field-induced MIT, σ(N, B, 0) ∞ (Bc - B)μ + ′. Our experimental results show that μ = μ′ = 1.1 ± 0.1 in sufficiently large magnetic fields.

AB - We have determined the temperature dependence of the electrical conductivity σ(N, B, T) of nominally uncompensated, neutron-transmutation-doped (NTD)70Ge:Ga samples in magnetic fields up to B = 8 T at low temperatures (T = 0.05-0.5 K) to investigate both the doping-induced metal-insulator transition (MIT), σ(N,B,0) ∞ (N - Nc)μ, and the magnetic-field-induced MIT, σ(N, B, 0) ∞ (Bc - B)μ + ′. Our experimental results show that μ = μ′ = 1.1 ± 0.1 in sufficiently large magnetic fields.

KW - Critical exponent

KW - Metal-insulator transition

KW - Neutron-transmutation doping

KW - Semiconductor

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U2 - 10.1016/S0921-4526(99)02879-3

DO - 10.1016/S0921-4526(99)02879-3

M3 - Article

AN - SCOPUS:0033719062

VL - 284-288

SP - 1677

EP - 1678

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

SN - 0921-4526

IS - PART II

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