Abstract
We have determined the temperature dependence of the electrical conductivity σ(N, B, T) of nominally uncompensated, neutron-transmutation-doped (NTD)70Ge:Ga samples in magnetic fields up to B = 8 T at low temperatures (T = 0.05-0.5 K) to investigate both the doping-induced metal-insulator transition (MIT), σ(N,B,0) ∞ (N - Nc)μ, and the magnetic-field-induced MIT, σ(N, B, 0) ∞ (Bc - B)μ + ′. Our experimental results show that μ = μ′ = 1.1 ± 0.1 in sufficiently large magnetic fields.
| Original language | English |
|---|---|
| Pages (from-to) | 1677-1678 |
| Number of pages | 2 |
| Journal | Physica B: Condensed Matter |
| Volume | 284-288 |
| Issue number | PART II |
| Publication status | Published - 2000 |
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Keywords
- Critical exponent
- Metal-insulator transition
- Neutron-transmutation doping
- Semiconductor
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
Cite this
Metal-insulator transition of NTD 70Ge : Ga in magnetic fields. / Watanabe, Michio; Itoh, Kohei M; Ootuka, Youiti; Haller, Eugene E.
In: Physica B: Condensed Matter, Vol. 284-288, No. PART II, 2000, p. 1677-1678.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Metal-insulator transition of NTD 70Ge
T2 - Ga in magnetic fields
AU - Watanabe, Michio
AU - Itoh, Kohei M
AU - Ootuka, Youiti
AU - Haller, Eugene E.
PY - 2000
Y1 - 2000
N2 - We have determined the temperature dependence of the electrical conductivity σ(N, B, T) of nominally uncompensated, neutron-transmutation-doped (NTD)70Ge:Ga samples in magnetic fields up to B = 8 T at low temperatures (T = 0.05-0.5 K) to investigate both the doping-induced metal-insulator transition (MIT), σ(N,B,0) ∞ (N - Nc)μ, and the magnetic-field-induced MIT, σ(N, B, 0) ∞ (Bc - B)μ + ′. Our experimental results show that μ = μ′ = 1.1 ± 0.1 in sufficiently large magnetic fields.
AB - We have determined the temperature dependence of the electrical conductivity σ(N, B, T) of nominally uncompensated, neutron-transmutation-doped (NTD)70Ge:Ga samples in magnetic fields up to B = 8 T at low temperatures (T = 0.05-0.5 K) to investigate both the doping-induced metal-insulator transition (MIT), σ(N,B,0) ∞ (N - Nc)μ, and the magnetic-field-induced MIT, σ(N, B, 0) ∞ (Bc - B)μ + ′. Our experimental results show that μ = μ′ = 1.1 ± 0.1 in sufficiently large magnetic fields.
KW - Critical exponent
KW - Metal-insulator transition
KW - Neutron-transmutation doping
KW - Semiconductor
UR - http://www.scopus.com/inward/record.url?scp=0033719062&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0033719062&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0033719062
VL - 284-288
SP - 1677
EP - 1678
JO - Physica B: Condensed Matter
JF - Physica B: Condensed Matter
SN - 0921-4526
IS - PART II
ER -