Abstract
We have determined the temperature dependence of the electrical conductivity σ(N, B, T) of nominally uncompensated, neutron-transmutation-doped (NTD)70Ge:Ga samples in magnetic fields up to B = 8 T at low temperatures (T = 0.05-0.5 K) to investigate both the doping-induced metal-insulator transition (MIT), σ(N,B,0) ∞ (N - Nc)μ, and the magnetic-field-induced MIT, σ(N, B, 0) ∞ (Bc - B)μ + ′. Our experimental results show that μ = μ′ = 1.1 ± 0.1 in sufficiently large magnetic fields.
Original language | English |
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Pages (from-to) | 1677-1678 |
Number of pages | 2 |
Journal | Physica B: Condensed Matter |
Volume | 284-288 |
Issue number | PART II |
DOIs | |
Publication status | Published - 2000 Jan 1 |
Keywords
- Critical exponent
- Metal-insulator transition
- Neutron-transmutation doping
- Semiconductor
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering