Micro-scale evaluation of interface strength on the patterned structures in LSI interconnects

Shoji Kamiya, Hisashi Sato, Masahiro Nishida, Chuantong Chen, Nobuyuki Shishido, Masaki Omiya, Takashi Suzuki, Tomoji Nakamura, Takeshi Nokuo, Tadahiro Nagasawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

Reliability of electronic devices has been an issue of serious importance. One of the potential factors to spoil the reliability is possible local drops of strength on the interface of multilayered structure. A new technique for the evaluation of local interface adhesion energy was applied to the interface between Cu and cap layer in a Cu damascene interconnect structure, in order to elucidate variation in adhesion strength as a function of measurement location.

Original languageEnglish
Title of host publicationStress-Induced Phenomena in Metallization - Eleventh International Workshop on Stress-Induced Phenomena in Metallization
Pages33-38
Number of pages6
DOIs
Publication statusPublished - 2010
Event11th International Workshop on Stress-Induced Phenomena in Metallization - Bad Schandau, Germany
Duration: 2010 Apr 122010 Apr 14

Publication series

NameAIP Conference Proceedings
Volume1300
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

Other11th International Workshop on Stress-Induced Phenomena in Metallization
Country/TerritoryGermany
CityBad Schandau
Period10/4/1210/4/14

Keywords

  • Cu line
  • Toughness of interface
  • damascene process
  • fracture

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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