Microscopic imaging of defect density distribution in GaAs and InGaP using the decay time of photo-excited carriers

K. Horiuchi; S. Kamata; M. Sato; F. Kannari; M. Hase; M. Kitajima

Microscopic imaging of defect density distribution in GaAs and InGaP using the decay time of photo-excited carriers

K. Horiuchi, S. Kamata, M. Sato, F. Kannari, M. Hase, M. Kitajima

Research output: Contribution to journal › Conference article › peer-review

Abstract

Through pump-probe experiment using femtosecond laser pulses, we demonstrated that the defect density distribution in a GaAs and InGaP can be imaged by the decay time of photo-excited carriers.

Original language	English
Pages (from-to)	813-814
Number of pages	2
Journal	OSA Trends in Optics and Photonics Series
Volume	96 A
Publication status	Published - 2004 Jan 1
Event	Conference on Lasers and Electro-Optics, CLEO - Washington, DC, United States Duration: 2004 May 17 → 2004 May 19

ASJC Scopus subject areas

Engineering(all)

Cite this

@article{b97de0af234c498085bd2fa7c3b1c1f6,

title = "Microscopic imaging of defect density distribution in GaAs and InGaP using the decay time of photo-excited carriers",

abstract = "Through pump-probe experiment using femtosecond laser pulses, we demonstrated that the defect density distribution in a GaAs and InGaP can be imaged by the decay time of photo-excited carriers.",

author = "K. Horiuchi and S. Kamata and M. Sato and F. Kannari and M. Hase and M. Kitajima",

year = "2004",

month = jan,

day = "1",

language = "English",

volume = "96 A",

pages = "813--814",

journal = "OSA Trends in Optics and Photonics Series",

issn = "1094-5695",

note = "Conference on Lasers and Electro-Optics, CLEO ; Conference date: 17-05-2004 Through 19-05-2004",

}

TY - JOUR

T1 - Microscopic imaging of defect density distribution in GaAs and InGaP using the decay time of photo-excited carriers

AU - Horiuchi, K.

AU - Kamata, S.

AU - Sato, M.

AU - Kannari, F.

AU - Hase, M.

AU - Kitajima, M.

PY - 2004/1/1

Y1 - 2004/1/1

N2 - Through pump-probe experiment using femtosecond laser pulses, we demonstrated that the defect density distribution in a GaAs and InGaP can be imaged by the decay time of photo-excited carriers.

AB - Through pump-probe experiment using femtosecond laser pulses, we demonstrated that the defect density distribution in a GaAs and InGaP can be imaged by the decay time of photo-excited carriers.

UR - http://www.scopus.com/inward/record.url?scp=33645229381&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33645229381&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:33645229381

SN - 1094-5695

VL - 96 A

SP - 813

EP - 814

JO - OSA Trends in Optics and Photonics Series

JF - OSA Trends in Optics and Photonics Series

T2 - Conference on Lasers and Electro-Optics, CLEO

Y2 - 17 May 2004 through 19 May 2004

ER -

Microscopic imaging of defect density distribution in GaAs and InGaP using the decay time of photo-excited carriers

Abstract

ASJC Scopus subject areas

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