Microscopic imaging of defect density distribution in GaAs and InGaP using the decay time of photo-excited carriers

K. Horiuchi, S. Kamata, M. Sato, F. Kannari, M. Hase, M. Kitajima

    Research output: Contribution to journalConference article

    Abstract

    Through pump-probe experiment using femtosecond laser pulses, we demonstrated that the defect density distribution in a GaAs and InGaP can be imaged by the decay time of photo-excited carriers.

    Original languageEnglish
    Pages (from-to)813-814
    Number of pages2
    JournalOSA Trends in Optics and Photonics Series
    Volume96 A
    Publication statusPublished - 2004 Jan 1
    EventConference on Lasers and Electro-Optics, CLEO - Washington, DC, United States
    Duration: 2004 May 172004 May 19

    ASJC Scopus subject areas

    • Engineering(all)

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