Microscopic imaging of defect density distribution in InGaP and GaN using the decay time of photo-excited carriers

S. Kamata, K. Horiuchi, M. Sato, M. Kaneko, S. Takahashi, F. Kannari

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

With pump-probe laser measurements of transient reflectivity representing the photo-excited carrier lifetime, we obtained two-dimensional images of the defect density distribution for InGaP and GaN. The defect distributions are compared with cathode-luminescence images.

Original languageEnglish
Title of host publicationFrontiers in Optics, FiO-2004
PublisherOptica Publishing Group (formerly OSA)
ISBN (Electronic)9781557528209
Publication statusPublished - 2004
EventFrontiers in Optics, FiO-2004 - Rochester, United States
Duration: 2004 Oct 12 → …

Publication series

NameOptics InfoBase Conference Papers

Conference

ConferenceFrontiers in Optics, FiO-2004
Country/TerritoryUnited States
CityRochester
Period04/10/12 → …

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Mechanics of Materials

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