TY - JOUR
T1 - Microstructure and annealing behavior of heavily neutron-irradiated β-SiC
AU - Yano, T.
AU - Suzuki, T.
AU - Maruyama, T.
AU - Iseki, T.
N1 - Funding Information:
The Authors wish to thank Mr. M. Ito. PNC. for many helpful suggestions and discussions. The authors gratefully acknowledge support for this research by a Grant-in-Aid for Scientific Research from the Ministry of Education, Science and Culture of Japan.
PY - 1988/7/2
Y1 - 1988/7/2
N2 - TEM studies were carried out on sintered β-SiC specimens which were irradiated in fast breeder reactors up to 1.0 × 1027 n/m2 (E > 0.1 MeV) at temperatures around 500°C. In SiC grains irradiated to 10 × 1025 to 10 × 1026 n/m2, unresolvable small black dots of 2 to 5 nm in size were observed. Change in microstructure occurred in the specimens irradiated to fluerices higher than 4.8 × 1026 n/m2. Clear straight line contrast of dislocations 10 to 30 nm in length was observed, which might be Frank-type interstitial dislocation loops, lying on {111} planes. The size of defects was increased with increasing neutron fluence. Postirradiation annealing of specimens resulted in an increase in size and a decrease in the number density of defects. No void was observed. It is suggested that the dislocation loops observed in this experiment are not the cause of irradiation-induced swelling of SiC.
AB - TEM studies were carried out on sintered β-SiC specimens which were irradiated in fast breeder reactors up to 1.0 × 1027 n/m2 (E > 0.1 MeV) at temperatures around 500°C. In SiC grains irradiated to 10 × 1025 to 10 × 1026 n/m2, unresolvable small black dots of 2 to 5 nm in size were observed. Change in microstructure occurred in the specimens irradiated to fluerices higher than 4.8 × 1026 n/m2. Clear straight line contrast of dislocations 10 to 30 nm in length was observed, which might be Frank-type interstitial dislocation loops, lying on {111} planes. The size of defects was increased with increasing neutron fluence. Postirradiation annealing of specimens resulted in an increase in size and a decrease in the number density of defects. No void was observed. It is suggested that the dislocation loops observed in this experiment are not the cause of irradiation-induced swelling of SiC.
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U2 - 10.1016/0022-3115(88)90261-9
DO - 10.1016/0022-3115(88)90261-9
M3 - Article
AN - SCOPUS:0024035280
SN - 0022-3115
VL - 155-157
SP - 311
EP - 314
JO - Journal of Nuclear Materials
JF - Journal of Nuclear Materials
IS - PART 1
ER -