Microstructure and annealing behavior of heavily neutron-irradiated β-SiC

T. Yano, T. Suzuki, T. Maruyama, T. Iseki

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

TEM studies were carried out on sintered β-SiC specimens which were irradiated in fast breeder reactors up to 1.0 × 1027 n/m2 (E > 0.1 MeV) at temperatures around 500°C. In SiC grains irradiated to 10 × 1025 to 10 × 1026 n/m2, unresolvable small black dots of 2 to 5 nm in size were observed. Change in microstructure occurred in the specimens irradiated to fluerices higher than 4.8 × 1026 n/m2. Clear straight line contrast of dislocations 10 to 30 nm in length was observed, which might be Frank-type interstitial dislocation loops, lying on {111} planes. The size of defects was increased with increasing neutron fluence. Postirradiation annealing of specimens resulted in an increase in size and a decrease in the number density of defects. No void was observed. It is suggested that the dislocation loops observed in this experiment are not the cause of irradiation-induced swelling of SiC.

Original languageEnglish
Pages (from-to)311-314
Number of pages4
JournalJournal of Nuclear Materials
Volume155-157
Issue numberPART 1
DOIs
Publication statusPublished - 1988 Jul 2
Externally publishedYes

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Materials Science(all)
  • Nuclear Energy and Engineering

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