Microstructures and grain boundaries of (Ti,Al)N films

T. Suzuki; D. Huang; Y. Ikuhara

doi:10.1016/S0257-8972(98)00550-7

Microstructures and grain boundaries of (Ti,Al)N films

T. Suzuki, D. Huang, Y. Ikuhara

Department of Mechanical Engineering

Research output: Contribution to journal › Article › peer-review

37 Citations (Scopus)

Abstract

Titanium and titanium-aluminum targets 100 φ in diameter were arc-discharged at ~500 °C under nitrogen plasma conditions, and thin films were synthesized on cemented carbide substrates. First, the Ti ions were bombarded under a high vacuum to improve the adhesion strength, second, the TiN films were deposited as interlayers, and finally (Ti,Al)N films were synthesized by 2-3 μm. The interface between TiN and (Ti,Al)N films had no amorphous layer, and they were continuously connected to each other on an atomic scale. Further, Al atoms were not observed in the TiN films even 20 nm away from the TiN-(Ti,Al)N interface. In this paper, the microstructures of (Ti,Al)N films and interfaces between TiN and (Ti,Al)N films were analyzed with high-resolution electron microscopy.

Original language	English
Pages (from-to)	41-47
Number of pages	7
Journal	Surface and Coatings Technology
Volume	107
Issue number	1
DOIs	https://doi.org/10.1016/S0257-8972(98)00550-7
Publication status	Published - 1998 Aug 21

Keywords

(Ti,Al)N films
Al
Grain boundaries
TiN films

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/S0257-8972(98)00550-7

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title = "Microstructures and grain boundaries of (Ti,Al)N films",

abstract = "Titanium and titanium-aluminum targets 100 φ in diameter were arc-discharged at ~500 °C under nitrogen plasma conditions, and thin films were synthesized on cemented carbide substrates. First, the Ti ions were bombarded under a high vacuum to improve the adhesion strength, second, the TiN films were deposited as interlayers, and finally (Ti,Al)N films were synthesized by 2-3 μm. The interface between TiN and (Ti,Al)N films had no amorphous layer, and they were continuously connected to each other on an atomic scale. Further, Al atoms were not observed in the TiN films even 20 nm away from the TiN-(Ti,Al)N interface. In this paper, the microstructures of (Ti,Al)N films and interfaces between TiN and (Ti,Al)N films were analyzed with high-resolution electron microscopy.",

keywords = "(Ti,Al)N films, Al, Grain boundaries, TiN films",

author = "T. Suzuki and D. Huang and Y. Ikuhara",

note = "Funding Information: This work has been supported by the Japan Securities Scholarship Foundation. ",

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T1 - Microstructures and grain boundaries of (Ti,Al)N films

AU - Suzuki, T.

AU - Huang, D.

AU - Ikuhara, Y.

N1 - Funding Information: This work has been supported by the Japan Securities Scholarship Foundation.

PY - 1998/8/21

Y1 - 1998/8/21

N2 - Titanium and titanium-aluminum targets 100 φ in diameter were arc-discharged at ~500 °C under nitrogen plasma conditions, and thin films were synthesized on cemented carbide substrates. First, the Ti ions were bombarded under a high vacuum to improve the adhesion strength, second, the TiN films were deposited as interlayers, and finally (Ti,Al)N films were synthesized by 2-3 μm. The interface between TiN and (Ti,Al)N films had no amorphous layer, and they were continuously connected to each other on an atomic scale. Further, Al atoms were not observed in the TiN films even 20 nm away from the TiN-(Ti,Al)N interface. In this paper, the microstructures of (Ti,Al)N films and interfaces between TiN and (Ti,Al)N films were analyzed with high-resolution electron microscopy.

AB - Titanium and titanium-aluminum targets 100 φ in diameter were arc-discharged at ~500 °C under nitrogen plasma conditions, and thin films were synthesized on cemented carbide substrates. First, the Ti ions were bombarded under a high vacuum to improve the adhesion strength, second, the TiN films were deposited as interlayers, and finally (Ti,Al)N films were synthesized by 2-3 μm. The interface between TiN and (Ti,Al)N films had no amorphous layer, and they were continuously connected to each other on an atomic scale. Further, Al atoms were not observed in the TiN films even 20 nm away from the TiN-(Ti,Al)N interface. In this paper, the microstructures of (Ti,Al)N films and interfaces between TiN and (Ti,Al)N films were analyzed with high-resolution electron microscopy.

KW - (Ti,Al)N films

KW - Al

KW - Grain boundaries

KW - TiN films

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Microstructures and grain boundaries of (Ti,Al)N films

Abstract

Keywords

ASJC Scopus subject areas

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