Microstructures and grain boundaries of (Ti,Al)N films

Tetsuya Suzuki, D. Huang, Y. Ikuhara

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Abstract

Titanium and titanium-aluminum targets 100 φ in diameter were arc-discharged at ~500 °C under nitrogen plasma conditions, and thin films were synthesized on cemented carbide substrates. First, the Ti ions were bombarded under a high vacuum to improve the adhesion strength, second, the TiN films were deposited as interlayers, and finally (Ti,Al)N films were synthesized by 2-3 μm. The interface between TiN and (Ti,Al)N films had no amorphous layer, and they were continuously connected to each other on an atomic scale. Further, Al atoms were not observed in the TiN films even 20 nm away from the TiN-(Ti,Al)N interface. In this paper, the microstructures of (Ti,Al)N films and interfaces between TiN and (Ti,Al)N films were analyzed with high-resolution electron microscopy.

Original languageEnglish
Pages (from-to)41-47
Number of pages7
JournalSurface and Coatings Technology
Volume107
Issue number1
Publication statusPublished - 1998 Aug 21

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Keywords

  • (Ti,Al)N films
  • Al
  • Grain boundaries
  • TiN films

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

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