Microstructures and grain boundaries of (Ti,Al)N films

Tetsuya Suzuki, D. Huang, Y. Ikuhara

Research output: Contribution to journalArticle

52 Citations (Scopus)

Abstract

Titanium and titanium-aluminum targets 100 φ in diameter were arc-discharged at ~500 °C under nitrogen plasma conditions, and thin films were synthesized on cemented carbide substrates. First, the Ti ions were bombarded under a high vacuum to improve the adhesion strength, second, the TiN films were deposited as interlayers, and finally (Ti,Al)N films were synthesized by 2-3 μm. The interface between TiN and (Ti,Al)N films had no amorphous layer, and they were continuously connected to each other on an atomic scale. Further, Al atoms were not observed in the TiN films even 20 nm away from the TiN-(Ti,Al)N interface. In this paper, the microstructures of (Ti,Al)N films and interfaces between TiN and (Ti,Al)N films were analyzed with high-resolution electron microscopy.

Original languageEnglish
Pages (from-to)41-47
Number of pages7
JournalSurface and Coatings Technology
Volume107
Issue number1
Publication statusPublished - 1998 Aug 21

Fingerprint

Grain boundaries
grain boundaries
microstructure
Microstructure
Titanium
titanium
Nitrogen plasma
nitrogen plasma
High resolution electron microscopy
Bond strength (materials)
high vacuum
Aluminum
carbides
Carbides
interlayers
electron microscopy
adhesion
arcs
Vacuum
Ions

Keywords

  • (Ti,Al)N films
  • Al
  • Grain boundaries
  • TiN films

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Microstructures and grain boundaries of (Ti,Al)N films. / Suzuki, Tetsuya; Huang, D.; Ikuhara, Y.

In: Surface and Coatings Technology, Vol. 107, No. 1, 21.08.1998, p. 41-47.

Research output: Contribution to journalArticle

Suzuki, T, Huang, D & Ikuhara, Y 1998, 'Microstructures and grain boundaries of (Ti,Al)N films', Surface and Coatings Technology, vol. 107, no. 1, pp. 41-47.
Suzuki, Tetsuya ; Huang, D. ; Ikuhara, Y. / Microstructures and grain boundaries of (Ti,Al)N films. In: Surface and Coatings Technology. 1998 ; Vol. 107, No. 1. pp. 41-47.
@article{01d2171783ab43f1837a3f79c97d709f,
title = "Microstructures and grain boundaries of (Ti,Al)N films",
abstract = "Titanium and titanium-aluminum targets 100 φ in diameter were arc-discharged at ~500 °C under nitrogen plasma conditions, and thin films were synthesized on cemented carbide substrates. First, the Ti ions were bombarded under a high vacuum to improve the adhesion strength, second, the TiN films were deposited as interlayers, and finally (Ti,Al)N films were synthesized by 2-3 μm. The interface between TiN and (Ti,Al)N films had no amorphous layer, and they were continuously connected to each other on an atomic scale. Further, Al atoms were not observed in the TiN films even 20 nm away from the TiN-(Ti,Al)N interface. In this paper, the microstructures of (Ti,Al)N films and interfaces between TiN and (Ti,Al)N films were analyzed with high-resolution electron microscopy.",
keywords = "(Ti,Al)N films, Al, Grain boundaries, TiN films",
author = "Tetsuya Suzuki and D. Huang and Y. Ikuhara",
year = "1998",
month = "8",
day = "21",
language = "English",
volume = "107",
pages = "41--47",
journal = "Surface and Coatings Technology",
issn = "0257-8972",
publisher = "Elsevier",
number = "1",

}

TY - JOUR

T1 - Microstructures and grain boundaries of (Ti,Al)N films

AU - Suzuki, Tetsuya

AU - Huang, D.

AU - Ikuhara, Y.

PY - 1998/8/21

Y1 - 1998/8/21

N2 - Titanium and titanium-aluminum targets 100 φ in diameter were arc-discharged at ~500 °C under nitrogen plasma conditions, and thin films were synthesized on cemented carbide substrates. First, the Ti ions were bombarded under a high vacuum to improve the adhesion strength, second, the TiN films were deposited as interlayers, and finally (Ti,Al)N films were synthesized by 2-3 μm. The interface between TiN and (Ti,Al)N films had no amorphous layer, and they were continuously connected to each other on an atomic scale. Further, Al atoms were not observed in the TiN films even 20 nm away from the TiN-(Ti,Al)N interface. In this paper, the microstructures of (Ti,Al)N films and interfaces between TiN and (Ti,Al)N films were analyzed with high-resolution electron microscopy.

AB - Titanium and titanium-aluminum targets 100 φ in diameter were arc-discharged at ~500 °C under nitrogen plasma conditions, and thin films were synthesized on cemented carbide substrates. First, the Ti ions were bombarded under a high vacuum to improve the adhesion strength, second, the TiN films were deposited as interlayers, and finally (Ti,Al)N films were synthesized by 2-3 μm. The interface between TiN and (Ti,Al)N films had no amorphous layer, and they were continuously connected to each other on an atomic scale. Further, Al atoms were not observed in the TiN films even 20 nm away from the TiN-(Ti,Al)N interface. In this paper, the microstructures of (Ti,Al)N films and interfaces between TiN and (Ti,Al)N films were analyzed with high-resolution electron microscopy.

KW - (Ti,Al)N films

KW - Al

KW - Grain boundaries

KW - TiN films

UR - http://www.scopus.com/inward/record.url?scp=0032131711&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032131711&partnerID=8YFLogxK

M3 - Article

VL - 107

SP - 41

EP - 47

JO - Surface and Coatings Technology

JF - Surface and Coatings Technology

SN - 0257-8972

IS - 1

ER -