Model of amorphous silicon deposition in DC glow discharge in silane

Yukio Yamaguchi, Akihiko Sumiyama, Ryu ichi Hattori, Yukihiko Morokuma, Toshiaki Makabe

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

The structure of the cylindrical DC glow discharge in SiH4 is presented by solving a basic set of equations, consisting of the electron, ion, gas molecule and radical continuity equations, and Poisson's equation. The electron swarm parameters are then obtained up to an E/N of 6×10-14 V cm2 from the analysis of the Boltzmann equation using the available cross-sectional information, and considering the local non-equilibrium at the cathode fall region. The deposition rate of the radicals to the inner electrode is calculated from the diffusion flux of the radical molecule in space. The evaluated deposition rate of a-Si:H in the DC discharge in SiH4 is consistent with previous experimental results within a factor of 0.5. The role of the negative ion and the influence of the non-equilibrium region in front of the cathode are also discussed.

Original languageEnglish
Pages (from-to)505-511
Number of pages7
JournalJournal of Physics D: Applied Physics
Volume22
Issue number4
DOIs
Publication statusPublished - 1989

Fingerprint

Silanes
Glow discharges
Deposition rates
Amorphous silicon
glow discharges
silanes
amorphous silicon
Cathodes
direct current
Molecules
Electrons
Boltzmann equation
Poisson equation
cathodes
Negative ions
Gases
continuity equation
Ions
Fluxes
negative ions

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Yamaguchi, Y., Sumiyama, A., Hattori, R. I., Morokuma, Y., & Makabe, T. (1989). Model of amorphous silicon deposition in DC glow discharge in silane. Journal of Physics D: Applied Physics, 22(4), 505-511. https://doi.org/10.1088/0022-3727/22/4/007

Model of amorphous silicon deposition in DC glow discharge in silane. / Yamaguchi, Yukio; Sumiyama, Akihiko; Hattori, Ryu ichi; Morokuma, Yukihiko; Makabe, Toshiaki.

In: Journal of Physics D: Applied Physics, Vol. 22, No. 4, 1989, p. 505-511.

Research output: Contribution to journalArticle

Yamaguchi, Y, Sumiyama, A, Hattori, RI, Morokuma, Y & Makabe, T 1989, 'Model of amorphous silicon deposition in DC glow discharge in silane', Journal of Physics D: Applied Physics, vol. 22, no. 4, pp. 505-511. https://doi.org/10.1088/0022-3727/22/4/007
Yamaguchi, Yukio ; Sumiyama, Akihiko ; Hattori, Ryu ichi ; Morokuma, Yukihiko ; Makabe, Toshiaki. / Model of amorphous silicon deposition in DC glow discharge in silane. In: Journal of Physics D: Applied Physics. 1989 ; Vol. 22, No. 4. pp. 505-511.
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